An unconventional method for measuring the TcL3-edge of technetium compounds

2014 ◽  
Vol 21 (6) ◽  
pp. 1275-1281 ◽  
Author(s):  
Peter E. R. Blanchard ◽  
Emily Reynolds ◽  
Brendan J. Kennedy ◽  
Chris D. Ling ◽  
Zhaoming Zhang ◽  
...  

TcL3-edge XANES spectra have been collected on powder samples of SrTcO3(octahedral Tc4+) and NH4TcO4(tetrahedral Tc7+) immobilized in an epoxy resin. Features in the TcL3-edge XANES spectra are compared with the pre-edge feature of the TcK-edge as well as other 4dtransition metalL3-edges. Evidence of crystal field splitting is obvious in the TcL3-edge, which is sensitive to the coordination number and oxidation state of the Tc cation. The TcL3absorption edge energy difference between SrTcO3(Tc4+) and NH4TcO4(Tc7+) shows that the energy shift at the TcL3-edge is an effective tool for studying changes in the oxidation states of technetium compounds. The TcL3-edge spectra are compared with those obtained from Mo and Ru oxide standards with various oxidation states and coordination environments. Most importantly, fitting the TcL3-edge to component peaks can provide direct evidence of crystal field splitting that cannot be obtained from the TcK-edge.

1967 ◽  
Vol 19 (25) ◽  
pp. 1417-1420 ◽  
Author(s):  
Walter N. Hardy ◽  
James R. Gaines

1974 ◽  
Vol 52 (18) ◽  
pp. 1759-1764 ◽  
Author(s):  
F. T. Hedgcock ◽  
S. Lenis ◽  
P. L. Li ◽  
J. O. Ström-Olsen ◽  
E. F. Wassermann

We have extended the low temperature magnetic anisotropy measurements on single crystals of zinc containing up to 600 p.p.m. manganese from magnetic fields of 9 to 56 kG. The crystal field splitting parameters determined at low magnetic fields also characterizes the magnetic anisotropy at high magnetic fields. Manganese–manganese interaction effects are observed in the magnetic anisotropy at manganese concentrations greater than 300 p.p.m. Low temperature magnetic anisotropy measurements on single crystals of zinc containing up to 164 p.p.m. chromium are reported and indicate a crystal field splitting of 0.16 K for the chromium ion.


2014 ◽  
Vol 53 (19) ◽  
pp. 10359-10369 ◽  
Author(s):  
Seira Shintoyo ◽  
Keishiro Murakami ◽  
Takeshi Fujinami ◽  
Naohide Matsumoto ◽  
Naotaka Mochida ◽  
...  

1996 ◽  
Vol 442 ◽  
Author(s):  
Harald Overhof

AbstractThe electronic properties of 3d transition metal (TM) defects located on one of the four different tetrahedral positions in 3C SiC are shown to be quite site-dependent. We explain the differences for the 3d TMs on the two substitutional sites within the vacancy model: the difference of the electronic structure between the carbon vacancy VC and the silicon vacancy VSi is responsible for the differences of the 3d TMs. The electronic properties of 3d TMs on the two tetrahedral interstitial sites differ even more: the TMs surrounded tetrahedrally by four Si atoms experience a large crystal field splitting while the tetrahedral C environment does not give rise to a significant crystal field splitting at all. It is only in the latter case that high-spin configurations are predicted.


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