scholarly journals Cation disorder in CZTS materials from anomalous diffraction at KMC-2 (BESSY)

2014 ◽  
Vol 70 (a1) ◽  
pp. C1774-C1774
Author(s):  
Daniel Többens ◽  
Kai Neldner ◽  
Laura Valle-Rios ◽  
Susan Schorr

The compound semiconductor Cu2ZnSnS4 (CZTS) is a promising alternative for absorber layers in thin film solar cells, as it has a nearly ideal band gap of about 1.5 eV, a high absorption coefficient for visible light, and contains only earth abundant and non-toxic elements. Besides chemical composition and phase purity, the efficiency of CZTS thin film solar cells depends strongly on the concentration of Cu- and Zn-antisites and copper vacancies in the kesterite-type structure. However, Cu(I) and Zn(II) are isoelectric and thus cannot be distinguished by conventional X-ray diffraction. In prior work we determined Cu-Zn-distribution successfully from neutron scattering [1]. Here we present experiments utilizing anomalous X-ray diffraction on the K-edges of Cu and Zn. Anomalous scattering coefficients are heavily wavelength-dependent close to the absorption edges of the respective element. This is utilized for contrast enhancement. Usage of multiple wavelengths above, below and between the absorption edges of Cu and Zn ensures significant overdetermination, so that the Cu-, Zn-, and vacancy concentrations can be refined reliably for the independent crystallographic sites. Experiments were conducted at the diffraction end station of the KMC-2 beamline [2] at BESSY (Berlin, Germany). KMC-2 provides X-ray radiation with both very stable energies and intensities. The accessible energy range of 4 – 14 keV is ideally suited for the K-edges of Cu (8979 eV) and Zn (9659 eV). A 6-circle goniometer in psi-geometry allows both powder and grazing incidence diffraction, so that bulk samples and thin films can be measured. The instrument can be equipped with either a scintillation point detector (Cyberstar) or an area detector (Bruker Vantec), allowing to optimize resolution and intensity to the needs of the experiment.

Author(s):  
Alain Lafond ◽  
Léo Choubrac ◽  
Catherine Guillot-Deudon ◽  
Pierre Fertey ◽  
Michel Evain ◽  
...  

Cu/Zn disorder in the kesterite Cu2ZnSnS4derivatives used for thin film based solar cells is an important issue for photovoltaic performances. Unfortunately, Cu and Zn cannot be distinguished by conventional laboratory X-ray diffraction. This paper reports on a resonant diffraction investigation of a Cu2ZnSnS4single crystal from a quenched powdered sample. The full disorder of Cu and Zn in thez= 1/4 atomic plane is shown. The structure, namely disordered kesterite, is then described in the I\bar 42m space group.


2015 ◽  
Vol 212 (3) ◽  
pp. 529-534 ◽  
Author(s):  
David Eisenhauer ◽  
Beatrix Pollakowski ◽  
Jonas Baumann ◽  
Veit Preidel ◽  
Daniel Amkreutz ◽  
...  

2013 ◽  
Vol 1538 ◽  
pp. 107-114
Author(s):  
Xianzhong Lin ◽  
Jaison Kavalakkatt ◽  
Martha Ch. Lux-Steiner ◽  
Ahmed Ennaoui

ABSTRACTQuaternary semiconductors, Cu2ZnSnS4 and Cu2ZnSnSe4 which contain only earth-abundant elements, have been considered as the alternative absorber layers to Cu(In,Ga)Se2 (CIGS) for thin film solar cells although CIGS-based solar cells have achieved efficiencies over 20 %. In this work we report an air-stable route for preparation of Cu2ZnSn(Sx,Se(1-x))4 (CZTSSe) thin film absorbers by a solution process based on the binary and ternary chalcogenide nanoparticle precursors dispersed in organic solvents. The CZTSSe absorber layers were achieved by spin coating of the ink precursors followed by annealing under Ar/Se atmosphere at temperature up to 580°C. We have investigated the influence of the annealing temperature on the reduction or elimination of detrimental secondary phases. X-ray diffraction combined with Raman spectroscopy was utilized to better identify the secondary phases existing in the absorber layers. Solar cells were completed by chemical bath deposited CdS buffer layer followed by sputtered i-ZnO/ZnO: Al bi-layers and evaporated Ni/Al grids.


2016 ◽  
Vol 18 (12) ◽  
pp. 8692-8700 ◽  
Author(s):  
Mirjana Dimitrievska ◽  
Andrew Fairbrother ◽  
Rene Gunder ◽  
Galina Gurieva ◽  
Haibing Xie ◽  
...  

Grazing incidence X-ray diffraction of kesterite shows a strong dependence of microstructural properties (domain size, microstrain) on the anion composition.


2006 ◽  
Vol 129 (3) ◽  
pp. 323-326
Author(s):  
Sachin S. Kulkarni ◽  
Jyoti S. Shirolikar ◽  
Neelkanth G. Dhere

Rapid thermal processing (RTP) provides a way to rapidly heat substrates to an elevated temperature to perform relatively short duration processes, typically less than 2–3min long. RTP can be utilized to minimize the process cycle time without compromising process uniformity, thus eliminating a bottleneck in CuIn1−xGaxSe2−ySy (CIGSS) module fabrication. Some approaches have been able to realize solar cells with conversion efficiencies close or equal to those for conventionally processed solar cells with similar device structures. A RTP reactor for preparation of CIGSS thin films on 10cm×10cm substrates has been designed, assembled, and tested at the Florida Solar Energy Center’s PV Materials Lab. This paper describes the synthesis and characterization of CIGSS thin-film solar cells by the RTP technique. Materials characterization of these films was done by scanning electron microscopy, x-ray energy dispersive spectroscopy, x-ray diffraction, Auger electron spectroscopy, electron probe microanalysis, and electrical characterization was done by current–voltage measurements on soda lime glass substrates by the RTP technique. Encouraging results were obtained during the first few experimental sets, demonstrating that reasonable solar cell efficiencies (up to 9%) can be achieved with relatively shorter cycle times, lower thermal budgets, and without using toxic gases.


1995 ◽  
Vol 39 ◽  
pp. 659-664 ◽  
Author(s):  
Kenji Ishida ◽  
Akinori Kita ◽  
Kouichi Hayashi ◽  
Toshihisa Horiuchi ◽  
Shoichi Kal ◽  
...  

Thin film technology is rapidly evolving today, and the characterization of the thin film and its surface have become very important issue not only from scientific but also technological viewpoints. Although x-ray diffraction measurements have been used as suitable evaluation methods in crystallography studies, its application to the structural evaluation of the thin films, especially organic one having the low electron densities, is not easy due to the small amounts of scattering volume and the high obstructive scattering noise from the substrate. However, the x-ray diffraction measurements under grazing incidence will aid not only in overcoming the such problems but also in analyzing in-plane structure of the thin films. Therefore, so-called grazing incidence x-ray diffraction (GIXD) has been recognized as one of the most powerful tools for the surface and thin film studies.


2014 ◽  
Vol 83 (12) ◽  
Author(s):  
M A Shcherbina ◽  
S N Chvalun ◽  
Sergey Anatol'evich Ponomarenko ◽  
Mikhail Valentinovich Kovalchuk

2011 ◽  
Vol 335-336 ◽  
pp. 1402-1405
Author(s):  
Zhe Hu ◽  
Wei Guang Yang ◽  
Sheng Liu ◽  
Ke Tang ◽  
Lin Jun Wang ◽  
...  

SnS is a promising p-type semiconductor material for low-cost and low-toxic solar cells due to its exciting properties, such as high absorption in the visible range, little toxicity, inexpensiveness, and so on. The CdS nano-layer used as buffer layer of ZnO nanowire arrays/CdS/SnS thin film solar cells was prepared by thermal evaporation method. X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM), UV-Vis spectra, Hall effect measurement system and I-V measurement system were used to characterize the ZnO nanowire arrays/CdS/SnS thin film solar cells. It is found that the CdS nano-layer plays a key role in reducing the leakage current.


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