Latent damage investigation on lateral nonuniform charge generation and stress-induced leakage current in silicon dioxide subjected to high-field current impulse stressing

Damage Investigation

Proceedings of the 1999 7th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.99TH8394) ◽

Latent damage investigation on lateral non-uniform charge generation and stress-induced leakage current in silicon dioxides subjected to low-level electrostatic discharge impulse stressing

10.1109/ipfa.1999.791326 ◽

1999 ◽

Author(s):

P.S. Lim ◽

W.K. Chim

Keyword(s):

Leakage Current ◽

Electrostatic Discharge ◽

Charge Generation ◽

Low Level ◽

Damage Investigation

Improved model for the stress-induced leakage current in thin silicon dioxide based on conduction-band electron and valence-band electron tunneling

Journal of Applied Physics ◽

10.1063/1.1429799 ◽

2002 ◽

Vol 91 (3) ◽

pp. 1577-1588 ◽

Cited By ~ 5

Author(s):

W. K. Chim ◽

P. S. Lim

Keyword(s):

Silicon Dioxide ◽

Valence Band ◽

Leakage Current ◽

Conduction Band ◽

Electron Tunneling ◽

Band Electron ◽

Conduction Band Electron ◽

Improved Model ◽

Valence Band Electron

1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings ◽

High field stress induced leakage current in 3.0-nm NO-grown gate dielectric films

10.1109/tencon.1995.496391 ◽

2002 ◽

Author(s):

Ze-Qiang Yao ◽

H.B. Harrison ◽

S. Dimitrijev ◽

Y.T. Yeow

Keyword(s):

Leakage Current ◽

High Field ◽

Gate Dielectric ◽

Dielectric Films ◽

Field Stress ◽

Modeling the trap generation and relaxation effects in thin oxides under unipolar and bipolar high-field impulse stressing using stress-induced leakage current

Journal of Applied Physics ◽

10.1063/1.1516266 ◽

2002 ◽

Vol 92 (11) ◽

pp. 6636-6645 ◽

Cited By ~ 1

Author(s):

W. K. Chim ◽

Y. N. Tan

Keyword(s):

Leakage Current ◽

High Field ◽

Relaxation Effects ◽

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

Stress-induced leakage current in thin oxides under high-field impulse stressing

10.1109/ipfa.2001.941492 ◽

2002 ◽

Author(s):

Y.N. Tan ◽

W.K. Chim ◽

P.S. Lim

Keyword(s):

Leakage Current ◽

High Field ◽

Stress-Induced Leakage Current and Lateral Nonuniform Charge Generation in Thermal Oxides Subjected to Negative-Gate-Voltage Impulse Stressing

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.2652 ◽

1999 ◽

Vol 38 (Part 1, No. 4B) ◽

pp. 2652-2655 ◽

Cited By ~ 1

Author(s):

Peng Soon Lim ◽

Wai Kin Chim

Keyword(s):

Leakage Current ◽

Gate Voltage ◽

Charge Generation ◽

Negative Gate Voltage

Stress-Induced Leakage Current and Lateral Non-Uniform Charge Generation In Thermal Oxides Subjected to Negative-Gate-Voltage Impulse Stressing

10.7567/ssdm.1998.d-6-3 ◽

1998 ◽

Author(s):

Wai-Kin CHIM ◽

Peng-Soon LIM

Keyword(s):

Leakage Current ◽

Gate Voltage ◽

Charge Generation ◽

Negative Gate Voltage

Identification of the transient stress-induced leakage current in silicon dioxide films for use in microelectromechanical systems capacitive switches

Applied Physics Letters ◽

10.1063/1.4919718 ◽

2015 ◽

Vol 106 (17) ◽

pp. 172904 ◽

Cited By ~ 2

Author(s):

C. Ryan ◽

Z. Olszewski ◽

R. Houlihan ◽

C. O'Mahony ◽

A. Blake ◽

...

Keyword(s):

Silicon Dioxide ◽

Leakage Current ◽

Microelectromechanical Systems ◽

Capacitive Switches ◽

Transient Stress ◽

Silicon Dioxide Films ◽

Experimental evidence of two conduction mechanisms for direct tunnelling stress-induced leakage current through ultrathin silicon dioxide gate dielectrics

Semiconductor Science and Technology ◽

10.1088/0268-1242/21/10/004 ◽

2006 ◽

Vol 21 (10) ◽

pp. 1393-1401 ◽

Cited By ~ 7

Author(s):

Piyas Samanta ◽

Tsz Yin Man ◽

Alain Chun Keung Chan ◽

Qingchun Zhang ◽

Chunxiang Zhu ◽

...

Keyword(s):

Silicon Dioxide ◽

Experimental Evidence ◽

Leakage Current ◽

Gate Dielectrics ◽

Conduction Mechanisms ◽

Conduction mechanism and origin of stress‐induced leakage current in thin silicon dioxide films

Journal of Applied Physics ◽

10.1063/1.363655 ◽

1996 ◽

Vol 80 (11) ◽

pp. 6360-6369 ◽

Cited By ~ 53

Author(s):

Mikihiro Kimura ◽

Tadahiro Ohmi

Keyword(s):

Silicon Dioxide ◽

Leakage Current ◽

Conduction Mechanism ◽

Silicon Dioxide Films ◽

Thin Silicon ◽