Refractive index and loss changes produced by current injection in InGaAs(P)-InGaAsP multiple quantum-well (MQW) waveguides

1995 ◽  
Vol 1 (2) ◽  
pp. 408-415 ◽  
Author(s):  
Jong-In Shim ◽  
M. Yamaguchi ◽  
P. Delansay ◽  
M. Kitamura
Keyword(s):  
Refractive Index ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Current Injection ◽  
Multiple Quantum

120 mW High-Power Low-Noise GaAlAs Multiple-Quantum-Well Laser Diodes with a New Real Refractive Index Guided Self-Aligned Structure

1996 ◽  
Vol 35 (Part 2, No. 4B) ◽  
pp. L493-L495 ◽  
Author(s):  
Toru Takayama ◽  
Osamu Imafuji ◽  
Tadaro Hashimoto ◽  
Masaaki Yuri ◽  
Akio Yoshikawa ◽  
...  
Keyword(s):  
Refractive Index ◽  
Quantum Well ◽  
High Power ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Low Noise ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser ◽  
Real Refractive Index

Refractive index changes in constant total effective length GaN/AlN multiple quantum well systems under external electric field

2014 ◽  
Vol 28 (29) ◽  
pp. 1450204 ◽  
Author(s):  
M. Solaimani
Keyword(s):  
Refractive Index ◽  
Electric Field ◽  
Quantum Well ◽  
External Electric Field ◽  
Energy Levels ◽  
Multiple Quantum Well ◽  
Oscillatory Behavior ◽  
Effective Length ◽  
Multiple Quantum ◽  
Index Changes

In this work we have investigated the effect of external electric field on the electronic structure and refractive index changes of a GaN/AlN constant total effective length multiple quantum well. A decreasing oscillatory behavior for energy levels was seen when the electric field increased and in some energy values the energy levels intersected. By increasing the number of wells, oscillator strength dropped suddenly and moved to higher electric field in a critical electric field. By using the number of wells and the total length of the structure as two tuning tools, we were able to select our previously determined critical electric field.

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