The metal-organic vapour phase epitaxy growth of GaInAsP and GaAlInAs based graded refractive index separate confinement heterostructure multiple quantum well lasers incorporating linearly graded confinement layers

1991 ◽  
Vol 9 (1-3) ◽  
pp. 355-360 ◽  
Author(s):  
N. Carr ◽  
A.K. Wood ◽  
J. Thompson ◽  
N. Maung ◽  
R.M. Ash ◽  
...  
Keyword(s):  
Refractive Index ◽  
Quantum Well ◽  
Multiple Quantum Well ◽  
Vapour Phase ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

scholarly journals The influence of quantum well and barrier thicknesses on photoluminescence spectra of InGaAs/AlInAs superlattices grown by LP-MOVPE

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Adriana Łozińska ◽  
Mikołaj Badura ◽  
Katarzyna Bielak ◽  
Beata Ściana ◽  
Marek Tłaczała
Keyword(s):  
Quantum Well ◽  
Vapour Phase ◽  
Semiconductor Heterostructures ◽  
Photoluminescence Spectra ◽  
Vapour Phase Epitaxy ◽  
Line Energy ◽  
Metal Organic ◽  
Organic Vapour ◽  
Non Destructive ◽  
Lattice Matched

In the presented work, the influence of the quantum well and barrier thicknesses on optical characteristics of InGaAs/AlInAs superlattices was reported. Six different structures of In0.53Ga0.47As/Al0.48In0.52As superlattices lattice-matched to InP were grown by low pressure metal organic vapour phase epitaxy (LP-MOVPE). Optical properties of the obtained structures were examined by means of photoluminescence spectroscopy. This technique allows quick, simple and non-destructive measurements of radiative optical transitions in different semiconductor heterostructures. The analysis of recorded photoluminescence spectra revealed the influence of the quantum well and barrier thicknesses on the emission line energy.

Epitaxy of III–V semiconductors

1991 ◽  
Vol 69 (3-4) ◽  
pp. 370-377
Author(s):  
P. Balk ◽  
A. Brauers ◽  
D. Grützmacher ◽  
O. Kayser ◽  
M. Weyers
Keyword(s):  
Multiple Quantum Well ◽  
Vapour Phase ◽  
Test Case ◽  
Multiple Quantum ◽  
Group V ◽  
Vapour Phase Epitaxy ◽  
Quantum Well Structures ◽  
Group Iii ◽  
Epitaxial Deposition ◽  
Metal Organic

This paper is concerned with the control of the epitaxial deposition of III–V materials by means of techniques using metal organic group III compounds and group V hydrides as starting materials: metal-organic vapour-phase epitaxy and metal-organic molecular-beam epitaxy. Such control is essential with regards to intentional and background doping and for the sake of the uniformity of the film properties of binary semiconductors. In systems containing ternary and quaternary materials, there is the further requirement of compositional control and lattice matching. In addition to the equipment aspects, this paper will discuss the contributions to be expected of novel precursors and the control problem related to selective area growth. Finally, the growth of multiple quantum well structures will be reviewed as a test case for mastering epitaxial deposition.

Misfit dislocations in green-emitting InGaN/GaN quantum well structures

2005 ◽  
Vol 892 ◽  
Author(s):  
Pedro MFJ Costa ◽  
Ranjan Datta ◽  
Menno J Kappers ◽  
Mary E Vickers ◽  
Colin J Humphreys
Keyword(s):  
Quantum Well ◽  
Strain Relaxation ◽  
Vapour Phase ◽  
Misfit Dislocations ◽  
Single Quantum Well ◽  
Vapour Phase Epitaxy ◽  
Quantum Well Structures ◽  
Transmission Electron ◽  
Metal Organic ◽  
Organic Vapour

AbstractMisfit dislocations (MDs) have been observed using transmission electron microscopy (TEM) in InGaN/GaN quantum well (MQW) structures grown under different metal-organic vapour phase epitaxy (MOVPE) regimes and with In-contents equal to or higher than 20%. These dislocations are even observed in a single quantum well 3 nm thick with an In-content of 22%. Conversely, no MDs were observed in QW structures with an In-content of 16%. The presence of MDs in the QW stack leads to strain relaxation which has been confirmed in the indium-rich structures by high resolution X-ray diffraction (HRXRD).

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