scholarly journals A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

2016 ◽  
Vol 4 (3) ◽  
pp. 978-987 ◽  
Author(s):  
Gianpaolo Romano ◽  
Asad Fayyaz ◽  
Michele Riccio ◽  
Luca Maresca ◽  
Giovanni Breglio ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Power Mosfets ◽  
Comprehensive Study

scholarly journals A Comprehensive Study on the Avalanche Breakdown Robustness of Silicon Carbide Power MOSFETs

Energies ◽  
2017 ◽  
Vol 10 (4) ◽  
pp. 452 ◽  
Author(s):  
Asad Fayyaz ◽  
Gianpaolo Romano ◽  
Jesus Urresti ◽  
Michele Riccio ◽  
Alberto Castellazzi ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Avalanche Breakdown ◽  
Power Mosfets ◽  
Comprehensive Study

scholarly journals Temperature-Dependent Short-Circuit Capability of Silicon Carbide Power MOSFETs

2016 ◽  
Vol 31 (2) ◽  
pp. 1555-1566 ◽  
Author(s):  
Zhiqiang Wang ◽  
Xiaojie Shi ◽  
Leon M. Tolbert ◽  
Fred Wang ◽  
Zhenxian Liang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Temperature Dependent ◽  
Power Mosfets

scholarly journals Short-Circuit Capability Exploration of Silicon Carbide Devices

2015 ◽  
Vol 821-823 ◽  
pp. 810-813 ◽  
Author(s):  
Maxime Berthou ◽  
Dominique Planson ◽  
Dominique Tournier
Keyword(s):  
Silicon Carbide ◽  
Short Circuit ◽  
Electronic Systems ◽  
Power Electronic ◽  
Power Transistor ◽  
Power Transistors ◽  
Capacitive Load ◽  
Short Circuit Condition

With the commercial availability of SiC power transistors, this decade will mark an important breakthrough in power transistor technology. However, in power electronic systems, disturbances may place them in short-circuit condition and little knowledge exist about their SC capability. This paper presents our study of SiC MOSFETs, JFETs and BJT under capacitive load short-circuit up to 600V.

Demonstration of Constant-Gate-Charge Scaling to Increase the Robustness of Silicon Carbide Power MOSFETs

2021 ◽  
pp. 1-5
Author(s):  
James A. Cooper ◽  
Dallas T. Morisette ◽  
Madankumar Sampath ◽  
Cheryl A. Stellman ◽  
Stephen B. Bayne ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Power Mosfets ◽  
Gate Charge

Comprehensive Analysis of Electrical Parameters Degradations for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

2018 ◽  
Vol 65 (12) ◽  
pp. 5440-5447 ◽  
Author(s):  
Jiaxing Wei ◽  
Siyang Liu ◽  
Lanlan Yang ◽  
Jiong Fang ◽  
Ting Li ◽  
...  
Keyword(s):  
Short Circuit ◽  
Comprehensive Analysis ◽  
Electrical Parameters ◽  
Power Mosfets
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