scholarly journals Experimental Determination of Interface Trap Density and Fixed Positive Oxide charge in Commercial 4H-SiC Power MOSFETs

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Susanna Yu ◽  
Marvin H. White ◽  
Anant K. Agarwal
Keyword(s):  
Experimental Determination ◽  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Oxide Charge ◽  
Power Mosfets

Simple method for the determination of the interface trap density at 77 K in fully depleted accumulation mode SOI MOSFETs

1993 ◽  
Vol 36 (6) ◽  
pp. 827-832 ◽  
Author(s):  
J.A. Martino ◽  
E. Simoen ◽  
U. Magnusson ◽  
A.L.P. Rotondaro ◽  
C. Claeys
Keyword(s):  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Simple Method ◽  
Fully Depleted ◽  
Accumulation Mode

Effects of Post-Deposition Annealing on CeO2 Gate Prepared by Metal-Organic Decomposition (MOD) Method on 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 837-840 ◽  
Author(s):  
Way Foong Lim ◽  
Kuan Yew Cheong ◽  
Zainovia Lockman ◽  
Farah Ainis Jasni ◽  
Hock Jin Quah
Keyword(s):  
Trap Density ◽  
Interface Trap Density ◽  
Interface Trap ◽  
Post Deposition Annealing ◽  
Oxide Charge ◽  
Ceo2 Film ◽  
Metal Organic ◽  
Effective Oxide Charge ◽  
Post Deposition ◽  
Organic Decomposition

Electrical properties of MOD-derived CeO2 film deposited on n-type 4H-SiC have been investigated. Post-deposition annealing of the oxide was performed in argon ambient for 15 minutes at 600, 800, and 1000°C in order to optimize the oxide properties. Spin-on coating was then used to deposit the annealed oxide onto the substrate. Results indicated that the effective oxide charge and slow trap density increased as temperature increased. Negative effective oxide charges were revealed in all annealed oxides. The lowest leakage current and interface trap density was obtained in the sample annealed in the highest temperature.

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