scholarly journals Role of Schottky Barrier Height Modulation on the Reverse Bias Current Behavior of MIS(p) Tunnel Diodes

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Kung-Chu Chen ◽  
Kuan-Wun Lin ◽  
Jenn-Gwo Hwu
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Reverse Bias ◽  
Schottky Barrier Height ◽  
Bias Current ◽  
Tunnel Diodes ◽  
Current Behavior

The Role of Carbon and Dysprosium in Ni[Dy]Si:C Contacts for Schottky-Barrier Height Reduction and Application in N-Channel MOSFETs With Si:C Source/Drain Stressors

2009 ◽  
Vol 56 (11) ◽  
pp. 2770-2777 ◽  
Author(s):  
Rinus Tek Po Lee ◽  
Alvin Tian-Yi Koh ◽  
Kian-Ming Tan ◽  
Tsung-Yang Liow ◽  
Dong Zhi Chi ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Height Reduction

Interpreting the nonideal reverse bias C-V characteristics and importance of the dependence of Schottky barrier height on applied voltage

1995 ◽  
Vol 205 (1) ◽  
pp. 41-50 ◽  
Author(s):  
Abdulmecit Turut ◽  
Mustafa Saglam ◽  
Hasan Efeoglu ◽  
Necati Yalcin ◽  
Muhammed Yildirim ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Applied Voltage ◽  
Reverse Bias ◽  
Schottky Barrier Height

scholarly journals Modeling of Inhomogeneous 4H-SiC Schottky and JBS Diodes in a Wide Temperature Range

2016 ◽  
Vol 858 ◽  
pp. 741-744 ◽  
Author(s):  
Besar Asllani ◽  
Maxime Berthou ◽  
Dominique Tournier ◽  
Pierre Brosselard ◽  
Phillippe Godignon
Keyword(s):  
Low Temperature ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Wide Temperature Range ◽  
Reverse Bias ◽  
Schottky Contact ◽  
Bias Current ◽  
Strong Impact ◽  
Temperature Range ◽  
Wide Range

This paper presents a study of the Schottky barrier evolution on SBD and JBS diodes over a wide range of temperatures from 80 to 500 K. We show that inhomogeneities of the Schottky contact have a strong impact on the dependence of barrier characteristics with temperature, especially below 200 K. Analysis of the reverse bias current of such diodes at low temperature show that the barrier height depends on temperature but also on voltage.

scholarly journals Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 417-420 ◽  
Author(s):  
Sergey A. Reshanov ◽  
Gerhard Pensl ◽  
Katsunori Danno ◽  
Tsunenobu Kimoto ◽  
Shigeomi Hishiki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Space Charge Region ◽  
Deep Level Transient Spectroscopy ◽  
Reverse Bias ◽  
Schottky Barrier Height ◽  
Deep Level ◽  
Peak Height ◽  
Quasi Fermi Level ◽  
Transient Spectroscopy

The effect of the Schottky barrier height on the detection of the midgap defects EH6 and EH7 in 4H-SiC by deep level transient spectroscopy (DLTS) is systematically studied. The results show that the DLTS peak height - and as a consequence the observed defect concentration - increases with the increasing barrier height and saturates above 1.5 eV for EH6 and above 1.7 eV for EH7, while below 1.1 eV the DLTS peak height completely disappears. A model is applied, which determines the position of the quasi-Fermi level in the space charge region as a function of the barrier height and of the reverse bias applied and which explains the variation of the DLTS peak height.

The Role of the Mercury-Si Schottky-Barrier Height in<tex>$Psi$</tex>-MOSFETs

2004 ◽  
Vol 51 (9) ◽  
pp. 1380-1384 ◽  
Author(s):  
J.Y. Choi ◽  
S. Ahmed ◽  
T. Dimitrova ◽  
J.T.C. Chen ◽  
D.K. Schroder
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height
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