Silicon Carbide Emitter Turn-off Thyristor, A Promising Technology For High Voltage and High Frequency Applications

2009 ◽  
Author(s):  
Jun Wang ◽  
Gangyao Wang ◽  
Jun Li ◽  
Alex Q. Huang
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
High Frequency ◽  
Promising Technology

scholarly journals Performance of Various SiC Devices and their Behavior in DC/DC Converter

2019 ◽  
Vol 9 (2S3) ◽  
pp. 62-67
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Voltage ◽  
Material Properties ◽  
High Frequency ◽  
Buck Converter ◽  
Nano Materials ◽  
Comparative Performance ◽  
Semiconducting Properties ◽  
Good Material

An extensive research on nano materials was carried out and the properties of Si were studied, Post study it was felt that there must be a material which exhibits semiconducting properties of Si with high breakdown voltage and work till high temperature range. Silicon Carbide (SiC) devices provided the answer for this. These devices are well known for high frequency, high voltage, high temperature and high power for their good material properties compared with silicon power MOSFET. In this paper, a study was conducted on various Silicon Carbide devices available in the market and the comparative performance of these devices were analysed. Furthermore there is a comparison of N channel silicon MOSFET device and silicon carbide device placed in bidirectional DC/DC buck converter in which Silicon Carbide device exhibit superior properties than Si device.

Analysis and Design of 3.3 kV IGBT Based Three-Level DC/DC Converter with High-Frequency Isolation and Current Doubler Rectifier

2009 ◽  
Vol 25 (25) ◽  
pp. 103-108
Author(s):  
Dmitri Vinnikov ◽  
Tanel Jalakas ◽  
Indrek Roasto
Keyword(s):  
High Voltage ◽  
High Frequency ◽  
Power Converter ◽  
Rolling Stock ◽  
Analysis And Design ◽  
Auxiliary Power ◽  
Igbt Modules ◽  
Isolation Transformer ◽  
New Generation ◽  
Generation Power

Analysis and Design of 3.3 kV IGBT Based Three-Level DC/DC Converter with High-Frequency Isolation and Current Doubler RectifierThe paper presents the findings of a R&D project connected to the development of auxiliary power supply (APS) for the high-voltage DC-fed rolling stock applications. The aim was to design a new-generation power converter utilizing high-voltage IGBT modules, which can outpace the predecessors in terms of power density, i.e. to provide more power for smaller volumetric space. The topology proposed is 3.3 kV IGBT-based three-level neutral point clamped (NPC) half-bridge with high-frequency isolation transformer and current doubler rectifier that fulfils all the targets imposed by the designers. Despite an increased component count the proposed converter is very simple in design and operation. The paper provides an overview of the design with several recommendations and guidelines. Moreover, the simulation and experimental results are discussed and the performance evaluation of the proposed converter is presented.

scholarly journals Simulation-Based Power-Loss Optimization of General-Purpose High-Voltage SiC MOSFET Circuit Under High-Frequency Operation

IEEE Access ◽  
2021 ◽  
Vol 9 ◽  
pp. 23786-23794
Author(s):  
Abhishek Kar ◽  
Mitiko Miura-Mattausch ◽  
Mainak Sengupta ◽  
Dondee Navaroo ◽  
Hideyuki Kikuchihara ◽  
...  
Keyword(s):  
High Voltage ◽  
High Frequency ◽  
Power Loss ◽  
General Purpose ◽  
Simulation Based ◽  
High Frequency Operation
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