Recent Advances in High-Voltage, High-Frequency Silicon-Carbide Power Devices

2006 ◽  
Author(s):  
Allen Hefner ◽  
Sei-hyung Ryu ◽  
Brett Hull ◽  
David Berning ◽  
Colleen Hood ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
High Frequency ◽  
Power Devices ◽  
Recent Advances

An 8kW LLC resonant converter in plasma power supply based on SiC power devices for efficiency improvement

Circuit World ◽  
2019 ◽  
Vol 45 (4) ◽  
pp. 181-188
Author(s):  
Zhenmin Wang ◽  
Wenyan Fan ◽  
Fangxiang Xie ◽  
Chunxian Ye
Keyword(s):  
Silicon Carbide ◽  
Power Supply ◽  
High Frequency ◽  
Experimental Results ◽  
Switching Frequency ◽  
Resonant Converter ◽  
Plasma Power ◽  
Power Devices ◽  
Content Type ◽  
Llc Resonant Converter

Purpose This paper aims to present an 8 kW LLC resonant converter designed for plasma power supply with higher efficiency and lighter structure. It presents how to solve the problems of large volume and weight, low performance and low efficiency of traditional plasma power supply. Design/methodology/approach At present, conventional silicon (Si) power devices’ switching performance is close to the theoretical limit determined by its material properties; the next-generation silicon carbide (SiC) power devices with outstanding advantages can be used to optimal design. This 8 kW LLC resonant converter prototype with silicon carbide (SiC) power devices with a modulated switching frequency ranges from 100  to 400 kHz. Findings The experimental results show that the topology, switching loss, rectifier loss, transformer loss and drive circuit of the full-bridge LLC silicon carbide (SiC) plasma power supply can be optimized. Research limitations/implications Due to the selected research object (plasma power supply), this study may have limited universality. The authors encourage the study of high frequency resonant converters for other applications such as argon arc welding. Practical implications This study provides a practical application for users to improve the quality of plasma welding. Originality/value The experimental results show that the full-bridge LLC silicon carbide (SiC) plasma power supply is preferred in operation under conditions of high frequency and high voltage. And its efficiency can reach 98%, making it lighter, more compact and more efficient than previous designs.

scholarly journals Terahertz time-domain ellipsometry with high precision for the evaluation of GaN crystals with carrier densities up to 1020 cm−3

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Verdad C. Agulto ◽  
Toshiyuki Iwamoto ◽  
Hideaki Kitahara ◽  
Kazuhiro Toya ◽  
Valynn Katrine Mag-usara ◽  
...  
Keyword(s):  
Electrical Properties ◽  
High Voltage ◽  
Time Domain ◽  
High Frequency ◽  
Carrier Density ◽  
Power Devices ◽  
Reflection Configuration ◽  
Nondestructive Characterization ◽  
Thz Waves

AbstractGallium nitride (GaN) is one of the most technologically important semiconductors and a fundamental component in many optoelectronic and power devices. Low-resistivity GaN wafers are in demand and actively being developed to improve the performance of vertical GaN power devices necessary for high-voltage and high-frequency applications. For the development of GaN devices, nondestructive characterization of electrical properties particularly for carrier densities in the order of 1019 cm−3 or higher is highly favorable. In this study, we investigated GaN single crystals with different carrier densities of up to 1020 cm−3 using THz time-domain ellipsometry in reflection configuration. The p- and s-polarized THz waves reflected off the GaN samples are measured and then corrected based on the analysis of multiple waveforms measured with a rotating analyzer. We show that performing such analysis leads to a ten times higher precision than by merely measuring the polarization components. As a result, the carrier density and mobility parameters can be unambiguously determined even at high conductivities.

scholarly journals Performance of Various SiC Devices and their Behavior in DC/DC Converter

2019 ◽  
Vol 9 (2S3) ◽  
pp. 62-67
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Voltage ◽  
Material Properties ◽  
High Frequency ◽  
Buck Converter ◽  
Nano Materials ◽  
Comparative Performance ◽  
Semiconducting Properties ◽  
Good Material

An extensive research on nano materials was carried out and the properties of Si were studied, Post study it was felt that there must be a material which exhibits semiconducting properties of Si with high breakdown voltage and work till high temperature range. Silicon Carbide (SiC) devices provided the answer for this. These devices are well known for high frequency, high voltage, high temperature and high power for their good material properties compared with silicon power MOSFET. In this paper, a study was conducted on various Silicon Carbide devices available in the market and the comparative performance of these devices were analysed. Furthermore there is a comparison of N channel silicon MOSFET device and silicon carbide device placed in bidirectional DC/DC buck converter in which Silicon Carbide device exhibit superior properties than Si device.

Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor

2018 ◽  
Vol 924 ◽  
pp. 104-107
Author(s):  
Wei Li Lu ◽  
Jia Li ◽  
Yu Long Fang ◽  
Jia Yun Yin ◽  
Zhi Hong Feng
Keyword(s):  
Epitaxial Growth ◽  
Leakage Current ◽  
High Throughput ◽  
High Voltage ◽  
High Performance ◽  
Etching Process ◽  
Power Devices ◽  
High Quality ◽  
Recent Advances

High quality SiC Epilayers are essential for the development of high performance power devices. Killer defects such as triangular defects could cause leakage current paths within the high voltage SiC devices. This paper reports on the recent advances in 4H-SiC epitaxial growth toward high-throughput production in a commercial planetary reactor. The triangular defects are suppressed by the optimized pre-etching process, and the physics behind was investigated. The doping and thickness uniformities of the intra-wafer and wafer-to-wafer have also been improved.

SiC Bipolar Power Devices

MRS Bulletin ◽  
2005 ◽  
Vol 30 (4) ◽  
pp. 299-304 ◽  
Author(s):  
T. Paul Chow
Keyword(s):  
Silicon Carbide ◽  
Power Electronics ◽  
High Voltage ◽  
High Power ◽  
Recent Progress ◽  
Future Trends ◽  
Market Demand ◽  
Power Devices ◽  
Power Switching ◽  
Schottky Rectifiers

AbstractThe successful commercialization of unipolar Schottky rectifiers in the 4H polytype of silicon carbide has resulted in a market demand for SiC high-power switching devices. This article reviews recent progress in the development of high-voltage 4H-SiC bipolar power electronics devices.We also present the outstanding material and processing challenges, reliability concerns, and future trends in device commercialization.

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