Effect of power supply imbalance on NF of CMOS low noise amplifier for UHF RFID applications

This paper presents an Ultra-Wideband (UWB) 3-5 GHz Low Noise Amplifier (LNA) employing Chebyshev filter. The LNA has been designed using Cadence 0.18um CMOS technology. Proposed LNA achieves a minimum noise figure of 2.2dB, power gain of 9dB.The power consumption is 6.3mW from 1.8V power supply.

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Minimization of Cascade Low-Noise Amplifier with 0.18 μm CMOS Process for 2.4 GHz RFID Applications

Lecture Notes in Electrical Engineering - Electronics and Signal Processing ◽

10.1007/978-3-642-21697-8_72 ◽

2011 ◽

pp. 571-578

Author(s):

Mu-Chun Wang ◽

Hsin-Chia Yang ◽

Yi-Jhen Li

Keyword(s):

Low Noise ◽

Low Noise Amplifier ◽

Cmos Process ◽

Noise Amplifier ◽

Rfid Applications

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Impact of ESD Protection and Power Supply Decoupling on 10 GHz Low Noise Amplifier

Proceedings of the 27th Symposium on Integrated Circuits and Systems Design - SBCCI '14 ◽

10.1145/2660540.2660551 ◽

2014 ◽

Author(s):

Wilson J. Bortoletto Machado ◽

Calvin Plett

Keyword(s):

Power Supply ◽

Low Noise ◽

Low Noise Amplifier ◽

Esd Protection ◽

Noise Amplifier

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A common gate low noise amplifier with high linearity over UHF RFID bands

10.1109/apemc.2008.4559818 ◽

2008 ◽

Author(s):

Hyoung-Hwan Roh ◽

Kyoung-Tae Park ◽

Ha-Ryong Oh ◽

Yeung-Rak Seong ◽

Jun-Seok Park ◽

...

Keyword(s):

Low Noise ◽

Low Noise Amplifier ◽

Uhf Rfid ◽

High Linearity ◽

Common Gate ◽

Noise Amplifier

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Design and Simulation of a 5.8GHz Low Noise Amplifier Used in RFID

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.441.133 ◽

2013 ◽

Vol 441 ◽

pp. 133-136

Author(s):

Yu Zhang ◽

Shu Hui Yang ◽

Yin Chao Chen

Keyword(s):

Radio Frequency Identification ◽

Noise Figure ◽

Low Noise ◽

Low Noise Amplifier ◽

Circuit Input ◽

Frequency Identification ◽

Noise Amplifier ◽

Radio Frequency Identification Devices ◽

Published Paper ◽

Rfid Applications

A 5.8GHz single-stage low noise amplifier (LNA) for radio frequency identification devices (RFID) applications was proposed according to the theory of LNA. It has been realized by ATF-541M4 transistor and its peripheral circuit, such as bias circuit, input and output matching network. The proposed LNA provides a gain of 12.696dB from the analysis of ADS. The LNA achieves 0.951dB noise figure (NF) at the frequency of 5.8GHz. The simulation results show that this LNA has good noise characteristic, the NF is less than other published paper.

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A Low Power SiGe-BiCMOS LNA for COMPASS Applications

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.513-517.4580 ◽

2014 ◽

Vol 513-517 ◽

pp. 4580-4584

Author(s):

Bing Liang Yu ◽

Jin Li ◽

Wen Yuan Li

Keyword(s):

Low Power ◽

Power Supply ◽

Noise Figure ◽

Low Noise ◽

Low Noise Amplifier ◽

Power Gain ◽

Bicmos Technology ◽

Sige Bicmos ◽

Resistive Feedback ◽

Noise Amplifier

A novel low-noise amplifier (LNA) suitable for COMPASS receiver applications is designed in SiGe-BiCMOS technology. Inductively degenerated technique and resistive feedback technique are employed to reduce the noise figure. With 1.8V power supply, the measured results achieve 17.23dB power gain and 2.58dB noise figure at 1.561GHz.

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A single power supply 0.1-3.5 GHz low noise amplifier design using a low cost 0.5 μm d-mode pHEMT process

Facta universitatis - series Electronics and Energetics ◽

10.2298/fuee2002317s ◽

2020 ◽

Vol 33 (2) ◽

pp. 317-326

Author(s):

Denis Sotskov ◽

Vadim Elesin ◽

Alexander Kuznetsov ◽

Nikolay Usachev ◽

Nikita Zhidkov ◽

...

Keyword(s):

Power Supply ◽

Noise Figure ◽

Low Cost ◽

Wide Band ◽

Low Noise ◽

Low Noise Amplifier ◽

Operating Frequency Range ◽

Amplifier Design ◽

Noise Amplifier ◽

Single Power

Design and testing results of a single power supply wide-band low noise amplifier (LNA) based on low cost 0.5 ?m D-mode pHEMT process are presented. It is shown that the designed cascode LNA has operating frequency range up to 3.5 GHz, power gain above 15 dB, noise figure below 2.2 dB, output linearity above 17 dBm and power consumption less than 325 mW. Potential immunity of the LNA to total ionizing dose and destructive single event effects exceed 300 krad and 60 MeV?cm2/mg respectively.

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