Interface traps in insulator/AlGaN/GaN heterostructure capacitors

The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems ◽

10.1109/asdam.2012.6418555 ◽

2012 ◽

Author(s):

J. Osvald

Keyword(s):

Interface Traps ◽

Gan Heterostructure

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Combined effects of proton irradiation and forward gate-bias stress on the interface traps in AlGaN/GaN heterostructure

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2021.3112767 ◽

2021 ◽

pp. 1-1

Author(s):

Tian Zhu ◽

Xue-Feng Zheng ◽

Jia Wang ◽

Mao-Sen Wang ◽

Kai Chen ◽

...

Keyword(s):

Proton Irradiation ◽

Combined Effects ◽

Interface Traps ◽

Gate Bias ◽

Bias Stress ◽

Gan Heterostructure ◽

Gate Bias Stress

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Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure

AIP Advances ◽

10.1063/5.0007650 ◽

2020 ◽

Vol 10 (6) ◽

pp. 065111

Author(s):

Xue-Feng Zheng ◽

Guan-Jun Chen ◽

Xiao-Hu Wang ◽

Ying-Zhe Wang ◽

Chong Wang ◽

...

Keyword(s):

Proton Irradiation ◽

Schottky Contact ◽

Interface Traps ◽

Gan Heterostructure

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Fast and slow interface traps in transparent NiO gated AlGaN/GaN heterostructure field-effect transistors

Applied Surface Science ◽

10.1016/j.apsusc.2019.01.058 ◽

2019 ◽

Vol 475 ◽

pp. 1043-1047 ◽

Author(s):

Liuan Li ◽

Jia Chen ◽

Zhenxing Liu ◽

Taotao Que ◽

Xin Gu ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Interface Traps ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Discrimination between volume and interface traps in C (V) and photo I(V) experiments on 10-30 nm MOS capacitors

Journal de Physique III ◽

10.1051/jp3:1993263 ◽

1993 ◽

Vol 3 (11) ◽

pp. 2101-2112

Author(s):

J. Peisner ◽

Y. Sangare ◽

G. Lévêque

Keyword(s):

Interface Traps ◽

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Calculation of lateral distribution of interface traps along MIS channel

Electronics Letters ◽

10.1049/el:19910906 ◽

1991 ◽

Vol 27 (16) ◽

pp. 1445 ◽

Author(s):

A.K. Henning ◽

J.A. Dimauro

Keyword(s):

Lateral Distribution ◽

Interface Traps

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2D MoS 2 Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO 2 /HfO 2 Dielectrics and Oxide Interface Traps

Advanced Electronic Materials ◽

10.1002/aelm.202100074 ◽

2021 ◽

pp. 2100074

Author(s):

Livia Janice Widiapradja ◽

Taewook Nam ◽

Yeonsu Jeong ◽

Hye‐Jin Jin ◽

Yangjin Lee ◽

...

Keyword(s):

Charge Injection ◽

Interface Traps ◽

Oxide Interface

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A method for characterizing near-interface traps in SiC metal–oxide–semiconductor capacitors from conductance–temperature spectroscopy measurements

Journal of Applied Physics ◽

10.1063/5.0037744 ◽

2021 ◽

Vol 129 (5) ◽

pp. 054501

Author(s):

Jordan R. Nicholls ◽

Arnar M. Vidarsson ◽

Daniel Haasmann ◽

Einar Ö. Sveinbjörnsson ◽

Sima Dimitrijev

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps

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Self-heating and the temperature dependence of the dc characteristics of GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.2172921 ◽

2006 ◽

Vol 24 (3) ◽

pp. 624-628 ◽

Author(s):

S. P. McAlister ◽

J. A. Bardwell ◽

S. Haffouz ◽

H. Tang

Keyword(s):

Temperature Dependence ◽

Field Effect ◽

Field Effect Transistors ◽

Self Heating ◽

Dc Characteristics ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

AIP Advances ◽

10.1063/5.0056337 ◽

2021 ◽

Vol 11 (8) ◽

pp. 085204

Author(s):

Yongxiong Yang ◽

Zhaojun Lin ◽

Mingyan Wang ◽

Heng Zhou ◽

Yang Liu ◽

...

Keyword(s):

Monte Carlo ◽

Monte Carlo Method ◽

Field Effect ◽

Field Effect Transistors ◽

Coulomb Field ◽

The Monte Carlo Method ◽

Polarization Coulomb Field Scattering ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Ultra-high sensitivity CO-sensor based on nanocrystalline metal oxide gate AlGaN/GaN heterostructure

10.1117/12.852727 ◽

2010 ◽

Author(s):

Sazia A. Eliza ◽

Robert Olah ◽

Achyut K. Dutta

Keyword(s):

Metal Oxide ◽

High Sensitivity ◽

Nanocrystalline Metal ◽

Co Sensor ◽

Gan Heterostructure

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