Simultaneous Integration of SiGe High Speed Transistors and High Voltage Transistors

The electrospinning process that produces fine nanofibrous materials have a major disadvantage in the area of productivity. However, alternating current (AC) electrospinning might help to solve the problem via the modification of high voltage signal. The aforementioned productivity aspect can be observed via a camera system that focuses on the jet creation area and that measures the average lifespan. The paper describes the optimization of polyamide 6 (PA 6) solutions and demonstrates the change in the behavior of the process following the addition of a minor dose of oxoacid. This addition served to convert the previously unspinnable (using AC) solution to a high-quality electrospinning solution. The visual analysis of the AC electrospinning of polymeric solutions using a high-speed camera and a programmable power source was chosen as the method for the evaluation of the quality of the process. The solutions were exposed to high voltage applying two types of AC signal, i.e., the sine wave and the step change. All the recordings presented in the paper contained two sets of data: firstly, camera recordings that showed the visual expression of electrospinning and, secondly, signal recordings that provided information on the data position in the signal function.

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Research on the Service Life of High-Voltage Vacuum Circuit Breaker of High-speed Train

10.1109/cieec50170.2021.9510823 ◽

2021 ◽

Author(s):

Jian Li ◽

Hui Dong ◽

Pankui Yang ◽

Yunming Shi ◽

Jianqiang Liu

Keyword(s):

Service Life ◽

High Voltage ◽

High Speed ◽

Circuit Breaker ◽

High Speed Train ◽

Vacuum Circuit Breaker

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High speed, high current capacity LIGBT and diode for output stage of high voltage monolithic three-phase inverter IC

10.1109/ispsd.1990.991060 ◽

2005 ◽

Cited By ~ 12

Author(s):

N. Sakurai ◽

M. Mori ◽

T. Yatsuo

Keyword(s):

High Voltage ◽

High Speed ◽

High Current ◽

Output Stage ◽

Phase Inverter ◽

Three Phase ◽

Three Phase Inverter

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A high-voltage half-bridge gate drive circuit for GaN devices with high-speed low-power and high-noise-immunity level shifter

2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2018.8393676 ◽

2018 ◽

Cited By ~ 4

Author(s):

Xin Ming ◽

Xuan Zhang ◽

Zhi-wen Zhang ◽

Xu-dong Feng ◽

Li Hu ◽

...

Keyword(s):

Low Power ◽

High Voltage ◽

High Speed ◽

Noise Immunity ◽

High Noise ◽

Level Shifter ◽

Drive Circuit

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4H-SIC Dmosfets for High Frequency Power Switching Applications

MRS Proceedings ◽

10.1557/proc-764-c2.7 ◽

2003 ◽

Vol 764 ◽

Cited By ~ 6

Author(s):

Sei-Hyung Ryu ◽

Anant K. Agarwal ◽

James Richmond ◽

John W. Palmour

Keyword(s):

High Voltage ◽

High Speed ◽

High Performance ◽

High Frequency Power ◽

Power Devices ◽

Power Switching ◽

High Speed Switching ◽

Unipolar Devices ◽

Very High ◽

Frequency Power

AbstractVery high critical field, reasonable bulk electron mobility, and high thermal conductivity make 4H-Silicon carbide very attractive for high voltage power devices. These advantages make high performance unipolar switching devices with blocking voltages greater than 1 kV possible in 4H-SiC. Several exploratory devices, such as vertical MOSFETs and JFETs, have been reported in SiC. However, most of the previous works were focused on high voltage aspects of the devices, and the high speed switching aspects of the SiC unipolar devices were largely neglected. In this paper, we report on the static and dynamic characteristics of our 4H-SiC DMOSFETs. A simple model of the on-state characteristics of 4H-SiC DMOSFETs is also presented.

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