Pothead-less terminals for high-voltage aerial cable design considerations

1950 ◽  
Author(s):  
L. F. Roehmann
Keyword(s):  
High Voltage ◽  
Design Considerations ◽  
Aerial Cable

DESIGN CONSIDERATIONS OF HIGH VOLTAGE BATTERY PACKS FOR ELECTRIC BUSES

2017 ◽  
Author(s):  
MEHMET UĞRAŞ CUMA ◽  
EMRAH YİRİK ◽  
ÇAĞLA DERİCİOĞLU ◽  
ERDEM ÜNAL ◽  
BURAK ONUR ◽  
...  
Keyword(s):  
High Voltage ◽  
Design Considerations ◽  
Battery Packs ◽  
High Voltage Battery

Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

1998 ◽  
Vol 45 (7) ◽  
pp. 1595-1604 ◽  
Author(s):  
K.P. Schoen ◽  
J.M. Woodall ◽  
J.A. Cooper ◽  
M.R. Melloch
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Experimental Analysis ◽  
Design Considerations

Design Considerations of Packaging a High Voltage Current Switch

2015 ◽  
Author(s):  
Ankan De ◽  
Adam Morgan ◽  
Subhashish Bhattacharya ◽  
Douglas C. Hopkins
Keyword(s):  
High Voltage ◽  
Power Devices ◽  
Variable Parameters ◽  
Package Design ◽  
Current Switch ◽  
Density Distributions ◽  
Design Considerations ◽  
Parasitic Parameters ◽  
Electric Potentials ◽  
Switch Design

In this paper an attempt has been made to demonstrate various package design considerations to accommodate series connection of high voltage Si-IGBT (6500V/25A die) and SiC-Diode (6500V/25A die). The effects of connecting the cathode of the series diode to the collector of the IGBT versus connecting the emitter of the IGBT to the anode of the series diode has been analyzed in regards to gate terminal operation and the parasitic line inductance of the structure. ANSYS Q3D/MAXWELL software have been used to analyze and extract parasitic inductance and capacitances in the package along with electromagnetic fields, electric potentials, and current density distributions throughout the package for variable parameters. SIMPLIS-SIMETRIX is used to simulate typical switch behavior for different parasitic parameters under hard switched conditions. Various simulation results have then been used to redesign and justify the optimized package structure for the final current switch design. The thermal behavior of such a package is also conducted in COMSOL in order to ensure that the thermal ratings of the power devices is not exceeded, and to understand where potentially harmful hotspots could arise and estimate the maximum attainable frequency of operation. The main motivation of this work is to enumerate detailed design considerations for packing a high voltage current switch package.

Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1449-1452 ◽  
Author(s):  
Yang Sui ◽  
Ginger G. Walden ◽  
Xiao Kun Wang ◽  
James A. Cooper
Keyword(s):  
High Voltage ◽  
Current Density ◽  
Drift Region ◽  
Power Devices ◽  
Power Switching ◽  
Design Considerations ◽  
Blocking Voltage ◽  
Switching Devices

We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT and thyristor attractive devices for high blocking voltages.

Sign in / Sign up

Export Citation Format

Share Document