Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers

1998 ◽  
Vol 45 (7) ◽  
pp. 1595-1604 ◽  
Author(s):  
K.P. Schoen ◽  
J.M. Woodall ◽  
J.A. Cooper ◽  
M.R. Melloch
Keyword(s):  
Schottky Barrier ◽  
High Voltage ◽  
Experimental Analysis ◽  
Design Considerations

DESIGN CONSIDERATIONS OF HIGH VOLTAGE BATTERY PACKS FOR ELECTRIC BUSES

2017 ◽  
Author(s):  
MEHMET UĞRAŞ CUMA ◽  
EMRAH YİRİK ◽  
ÇAĞLA DERİCİOĞLU ◽  
ERDEM ÜNAL ◽  
BURAK ONUR ◽  
...  
Keyword(s):  
High Voltage ◽  
Design Considerations ◽  
Battery Packs ◽  
High Voltage Battery

Design Considerations of Packaging a High Voltage Current Switch

2015 ◽  
Author(s):  
Ankan De ◽  
Adam Morgan ◽  
Subhashish Bhattacharya ◽  
Douglas C. Hopkins
Keyword(s):  
High Voltage ◽  
Power Devices ◽  
Variable Parameters ◽  
Package Design ◽  
Current Switch ◽  
Density Distributions ◽  
Design Considerations ◽  
Parasitic Parameters ◽  
Electric Potentials ◽  
Switch Design

In this paper an attempt has been made to demonstrate various package design considerations to accommodate series connection of high voltage Si-IGBT (6500V/25A die) and SiC-Diode (6500V/25A die). The effects of connecting the cathode of the series diode to the collector of the IGBT versus connecting the emitter of the IGBT to the anode of the series diode has been analyzed in regards to gate terminal operation and the parasitic line inductance of the structure. ANSYS Q3D/MAXWELL software have been used to analyze and extract parasitic inductance and capacitances in the package along with electromagnetic fields, electric potentials, and current density distributions throughout the package for variable parameters. SIMPLIS-SIMETRIX is used to simulate typical switch behavior for different parasitic parameters under hard switched conditions. Various simulation results have then been used to redesign and justify the optimized package structure for the final current switch design. The thermal behavior of such a package is also conducted in COMSOL in order to ensure that the thermal ratings of the power devices is not exceeded, and to understand where potentially harmful hotspots could arise and estimate the maximum attainable frequency of operation. The main motivation of this work is to enumerate detailed design considerations for packing a high voltage current switch package.

Silicon-carbide high-voltage (400 V) Schottky barrier diodes

1992 ◽  
Vol 13 (10) ◽  
pp. 501-503 ◽  
Author(s):  
M. Bhatnagar ◽  
P.K. McLarty ◽  
B.J. Baliga
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Schottky Barrier Diodes

I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrier

2011 ◽  
Vol 45 (10) ◽  
pp. 1374-1377 ◽  
Author(s):  
P. A. Ivanov ◽  
I. V. Grekhov ◽  
O. I. Kon’kov ◽  
A. S. Potapov ◽  
T. P. Samsonova ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
High Voltage

Application of Silicon Carbide Diode in Ultrasound High Voltage Pulse Protection Circuit

2013 ◽  
Vol 290 ◽  
pp. 115-119
Author(s):  
Shi Yuan Zhou ◽  
Kai Zhang ◽  
Dinguo Xiao ◽  
Chun Guang Xu ◽  
Bo Yang
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Voltage Pulse ◽  
Recovery Time ◽  
High Performance ◽  
High Voltage Pulse ◽  
Protection Level ◽  
Protection Circuit ◽  
Reverse Recovery Time

SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode’s high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.

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