A low supply voltage 2µW half bandgap reference in standard sub-µ CMOS

Author(s):  
Ali Far
2008 ◽  
Vol 55 (7) ◽  
pp. 609-613 ◽  
Author(s):  
A. Becker-Gomez ◽  
T. Lakshmi Viswanathan ◽  
T.R. Viswanathan

1992 ◽  
Vol 27 (4) ◽  
pp. 583-588 ◽  
Author(s):  
Y. Miyawaki ◽  
T. Nakayama ◽  
S. Kobayashi ◽  
N. Ajika ◽  
M. Ohi ◽  
...  

2012 ◽  
Vol 43 (11) ◽  
pp. 863-868 ◽  
Author(s):  
Ze-Kun Zhou ◽  
Xue-Chun Ou ◽  
Yue Shi ◽  
Pei-Sheng Zhu ◽  
Ying-Qian Ma ◽  
...  

2017 ◽  
Vol 2017 ◽  
pp. 1-10
Author(s):  
Jinpeng Qiu ◽  
Tong Liu ◽  
Xubin Chen ◽  
Yongheng Shang ◽  
Jiongjiong Mo ◽  
...  

This paper presents a new 12-bit digital to analog converter (DAC) circuit based on a low-offset bandgap reference (BGR) circuit with two cascade transistor structure and two self-contained feedback low-offset operational amplifiers to reduce the effects of offset operational amplifier voltage effect on the reference voltage, PMOS current-mirror mismatch, and its channel modulation. A Start-Up circuit with self-bias current architecture and multipoint voltage monitoring is employed to keep the BGR circuit working properly. Finally, a dual-resistor ladder DAC-Core circuit is used to generate an accuracy DAC output signal to the buffer operational amplifier. The proposed circuit was fabricated in CSMC 0.5 μm 5 V 1P4M process. The measured differential nonlinearity (DNL) of the output voltages is less than 0.45 LSB and integral nonlinearity (INL) less than 1.5 LSB at room temperature, consuming only 3.5 mW from a 5 V supply voltage. The DNL and INL at −55°C and 125°C are presented as well together with the discussion of possibility of improving the DNL and INL accuracy in future design.


2014 ◽  
Vol 23 (01) ◽  
pp. 1450004 ◽  
Author(s):  
XIAOBO XUE ◽  
XIAOLEI ZHU ◽  
QIFENG SHI ◽  
LENIAN HE

In this paper, a 12-bit current-steering digital-to-analog converter (DAC) employing a deglitching technique is proposed. The deglitching technique is realized by lowering the voltage swing of the control signal as well as by using a method of glitch counteraction (GC). A new switch–driver structure is designed to enable the effectiveness of the GC and provide sufficient driving capability under a low supply voltage. Moreover, the control signal's rise/fall asymmetry which increases the glitch error can be suppressed by using the proposed switch–driver structure. The 12-bit DAC is implemented in 180 nm CMOS technology. The measurement results show that the spurious free dynamic range (SFDR) at low signal frequency is 78.8 dB, and it is higher than 70 dB up to 60 MHz signal frequency at 400 MS/s. The measured INL and DNL are both less than ±0.6 LSB.


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