A low-IF WiMAX RF transceiver in 0.18μm CMOS technology

Author(s):  
Ajay Taparia ◽  
Syed Askari Nakvi ◽  
Bhaskar Banerjee
2021 ◽  
Vol 110 ◽  
pp. 105006
Author(s):  
Marwa Mansour ◽  
Abdelhalim Zekry ◽  
Mohammed K. Ali ◽  
Heba Shawkey

2013 ◽  
Vol 22 (09) ◽  
pp. 1340007 ◽  
Author(s):  
WEIYANG LIU ◽  
JINGJING CHEN ◽  
HAIYONG WANG ◽  
NANJIAN WU

This paper presents a low power RF transceiver for 2.4 GHz ZigBee applications. The current reused inductor-less-load balun low noise amplifier (LNA) with quadrature mixer is proposed for area and power saving for low-IF receiver. The transmitter adopts power efficient power amplifier (PA) to improve transmitting efficiency. This RF transceiver is implemented in 0.18 μm CMOS technology. The receiver achieves 6.5 dB noise figure (NF) and 20 dB conversion gain. The transmitter delivers maximum +3 dBm output power with PA efficiency of 30%. The receiver and transmitter front-end dissipate 1.9 mW and 5.3 mW at 1.8 V supply, respectively. The whole die area is 0.95 mm2.


Author(s):  
Paulo Augusto Dal Fabbro ◽  
Tindaro Pittorino ◽  
Christoph Kuratli ◽  
Robert Kvacek ◽  
Martin Kucera ◽  
...  

2018 ◽  
Vol 11 (1) ◽  
pp. 3-6
Author(s):  
Md. Jamil Uddin ◽  
Hadaate Ullah ◽  
Mohammad Arif Sobhan Bhuiyan

Abstract The bandpass filter is one of the essential blocks of every modern RF transceiver. Performance of the transceiver greatly depends on the performance of the bandpass filter. A bandpass filter designed with passive inductors suffers from some drawbacks like large chip size, low-quality factor, less tenability etc. To prevail over these constraints, an active inductor-based bandpass filter circuit has been designed in GPDK-90nm CMOS technology utilizing cadence virtuoso environment. The simulation result shows that the active inductor-based bandpass filter circuit design achieves a gain of 6.79dB, a bandwidth of 5.05 GHz and a noise figure of 3.10dB. The circuit dissipates only 3.55mW power for its operation from a single 1.5V DC supply. By avoiding bulky inductor in the design helped to attain a very small chip area of 127.704μm2.


1988 ◽  
Vol 49 (C4) ◽  
pp. C4-41-C4-44
Author(s):  
G. J.T. DAVIDS ◽  
P. B. HARTOG ◽  
J. W. SLOTBOOM ◽  
G. STREUTKER ◽  
A. G. van der SIJDE ◽  
...  
Keyword(s):  

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-13-C4-22
Author(s):  
F. NEPPL ◽  
H.-J. PFLEIDERER
Keyword(s):  

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