CuAg/Al2O3/CuAg Threshold Switching Selector for RRAM Applications

Author(s):  
Xi Zhou ◽  
Liang Zhao ◽  
Linfeng Lu ◽  
Dongdong Li
Keyword(s):  
2019 ◽  
Vol 30 (21) ◽  
pp. 215201 ◽  
Author(s):  
Xuanqi Huang ◽  
Runchen Fang ◽  
Chen Yang ◽  
Kai Fu ◽  
Houqiang Fu ◽  
...  

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Asghar Askarian

Abstract In this study, we are going to design all optical 1-bit comparator by combining wave interference and threshold switching methods. The final structure composed of two nonlinear ring resonators and seven waveguides. The functionality of the suggested logical structure is analyzed and simulated by using plane wave expansion (PWE) and finite difference time domain (FDTD) methods. According to results, the proposed all optical 1-bit comparator has faster response and smaller footprint than all previous works. The maximum ON-OFF contrast ratio, delay time and area of the suggested optical comparator are about 16.67 dB, 1.8 ps, and 513 µm2, respectively.


2021 ◽  
Vol 135 ◽  
pp. 106123
Author(s):  
Yu Wang ◽  
Daqi Shen ◽  
Yilei Liang ◽  
Yize Zhao ◽  
Xintong Chen ◽  
...  
Keyword(s):  

Author(s):  
Jonas Keukelier ◽  
Karl Opsomer ◽  
Thomas Nuytten ◽  
Stefanie Sergeant ◽  
Wouter Devulder ◽  
...  

Correction for ‘Impact of changes in bond structure on ovonic threshold switching behaviour in GeSe2’ by Jonas Keukelier et al., J. Mater. Chem. C, 2021, DOI: 10.1039/d0tc04086j.


2021 ◽  
Vol 9 (1) ◽  
pp. 117-126
Author(s):  
Jonas Keukelier ◽  
Karl Opsomer ◽  
Thomas Nuytten ◽  
Stefanie Sergeant ◽  
Wouter Devulder ◽  
...  

Raman spectroscopy and electrical measurements are performed on sputtered GexSe1−x thin films to identify and link bond presence to electrical behaviour.


2017 ◽  
Vol 111 (25) ◽  
pp. 252102 ◽  
Author(s):  
Guangyu Liu ◽  
Liangcai Wu ◽  
Zhitang Song ◽  
Yan Liu ◽  
Tao Li ◽  
...  

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