Phase Control using Network Node Voltage Feedback for Capacitor-Coupled Dual Active Bridge DC-DC Converters

2021 ◽  
Author(s):  
Sunghyuk Choi ◽  
Jin-Su Hong ◽  
Jung-Ik Ha
Keyword(s):  
Phase Control ◽  
Network Node ◽  
Dual Active Bridge ◽  
Node Voltage ◽  
Voltage Feedback

A Carrier-Phase Control Suitable for Conducted EMI Noise Reduction in a Multiple-Converter System

2011 ◽  
Vol 131 (6) ◽  
pp. 811-819
Author(s):  
Michio Tamate ◽  
Akio Toba ◽  
Yasushi Matsumoto ◽  
Keiji Wada ◽  
Toshihisa Shimizu
Keyword(s):  
Noise Reduction ◽  
Carrier Phase ◽  
Phase Control ◽  
Conducted Emi

Current Reduction Method for Dual Active Bridge Converter in Non-linear Dead-time Compensation Method

2020 ◽  
Vol 140 (3) ◽  
pp. 175-183
Author(s):  
Kengo Kawauchi ◽  
Hayato Higa ◽  
Hiroki Watanabe ◽  
Keisuke Kusaka ◽  
Jun-ichi Itoh
Keyword(s):  
Reduction Method ◽  
Dead Time ◽  
Compensation Method ◽  
Dual Active Bridge ◽  
Non Linear ◽  
Dead Time Compensation ◽  
Current Reduction

Phase Control and Calibration Characteristics of Optically Controlled Phased Array Antenna Feed Using Multiple SMFs

2011 ◽  
Vol E94-C (10) ◽  
pp. 1634-1640 ◽  
Author(s):  
Daiki TAKEUCHI ◽  
Wataru CHUJO ◽  
Shin-ichi YAMAMOTO ◽  
Yahei KOYAMADA
Keyword(s):  
Phased Array ◽  
Phase Control ◽  
Array Antenna ◽  
Antenna Feed ◽  
Phased Array Antenna

Analysis of Retention Time Degradation Caused by Electrostatic Potential Variation between Adjacent Bit-Line and Adjacent Contact Node in DRAM

2016 ◽  
Author(s):  
Jungil Mok ◽  
Byungki Kang ◽  
Daesun Kim ◽  
Hongsun Hwang ◽  
Sangjae Rhee ◽  
...  
Keyword(s):  
Electric Field ◽  
Electrostatic Potential ◽  
Critical Dimension ◽  
Data Retention ◽  
Signal Line ◽  
Adjacent Node ◽  
Storage Node ◽  
Retention Characteristics ◽  
Node Voltage ◽  
The Relationship

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.

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