Analysis of Retention Time Degradation Caused by Electrostatic Potential Variation between Adjacent Bit-Line and Adjacent Contact Node in DRAM

Abstract Systematic retention failure related on the adjacent electrostatic potential is studied with sub 20nm DRAM. Unlike traditional retention failures which are caused by gate induced drain leakage or junction leakage, this failure is influenced by the combination of adjacent signal line and adjacent contact node voltage. As the critical dimension between adjacent active and the adjacent signal line and contact node is scaled down, the effect of electric field caused by adjacent node on storage node is increased gradually. In this paper, we will show that the relationship between the combination electric field of adjacent nodes and the data retention characteristics and we will demonstrate the mechanism based on the electrical analysis and 3D TCAD simulation simultaneously.

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Runtime Variability Monitor for Data Retention Characteristics of Commercial NAND Flash Memory

2021 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps46558.2021.9405143 ◽

2021 ◽

Author(s):

Matchima Buddhanoy ◽

Sadman Sakib ◽

Biswajit Ray

Keyword(s):

Flash Memory ◽

Nand Flash ◽

Nand Flash Memory ◽

Data Retention ◽

Retention Characteristics

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The relationship between critical dimension shift and diffusion in negative chemically amplified resist systems

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.585345 ◽

1991 ◽

Vol 9 (6) ◽

pp. 3380 ◽

Cited By ~ 14

Author(s):

Theodore H. Fedynyshyn

Keyword(s):

Critical Dimension ◽

Chemically Amplified ◽

Chemically Amplified Resist ◽

The Relationship ◽

And Diffusion

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Charge storage and data retention characteristics of forming gas-annealed Gd2O3-nanocrystal nonvolatile memory cell

Microelectronics Reliability ◽

10.1016/j.microrel.2011.10.014 ◽

2012 ◽

Vol 52 (8) ◽

pp. 1627-1631 ◽

Cited By ~ 3

Author(s):

Jer-Chyi Wang ◽

Chih-Ting Lin ◽

Chi-Hsien Huang ◽

Chao-Sung Lai ◽

Chin-Hsiang Liao

Keyword(s):

Nonvolatile Memory ◽

Memory Cell ◽

Charge Storage ◽

Data Retention ◽

Retention Characteristics

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TCAD Simulation of Data Retention Characteristics of Charge Trap Device for 3-D NAND Flash Memory

2015 IEEE International Memory Workshop (IMW) ◽

10.1109/imw.2015.7150306 ◽

2015 ◽

Cited By ~ 6

Author(s):

Dongyean Oh ◽

Bonghoon Lee ◽

Eunmee Kwon ◽

Sangyong Kim ◽

Gyuseog Cho ◽

...

Keyword(s):

Flash Memory ◽

Nand Flash ◽

Nand Flash Memory ◽

Data Retention ◽

Charge Trap ◽

Retention Characteristics ◽

Tcad Simulation

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Degradation of tunnel oxide by FN current stress and its effects on data retention characteristics of 90 nm NAND flash memory cells

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual. ◽

10.1109/relphy.2003.1197798 ◽

2003 ◽

Author(s):

Jae-Duk Lee ◽

Jeong-Hyuk Choi ◽

Donggun Park ◽

Kinam Kim

Keyword(s):

Flash Memory ◽

Memory Cells ◽

Nand Flash ◽

Nand Flash Memory ◽

Data Retention ◽

Current Stress ◽

Retention Characteristics

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DIRECTIONAL DIFFUSION OF K ATOMS ON A GaAs(110) SURFACE

International Journal of Nanoscience ◽

10.1142/s0219581x06005339 ◽

2006 ◽

Vol 05 (06) ◽

pp. 895-900 ◽

Cited By ~ 1

Author(s):

NOBUYUKI ISHIDA ◽

AGUS SUBAGYO ◽

KAZUHISA SUEOKA

Keyword(s):

Dipole Moment ◽

Electric Field ◽

Radial Direction ◽

Negative Sample ◽

Directional Diffusion ◽

Sample Bias ◽

Induced Dipole ◽

High K ◽

Scanning Area ◽

The Relationship

We performed STM measurements on the K/GaAs (110) surface with high K coverage. The K atoms gradually disappeared while scanning the tip over the surface at negative sample bias voltage. The phenomenon strongly occurred over the scanning area and can be explained by the field-induced surface diffusion from the scanning area to radial direction. Considering the interaction between the dipole moment of the adsorbed K atoms and the electric field, we discuss the relationship between the static and induced dipole moment of K atoms on a GaAs (110) surface.

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Anisotropic Diffusion and the Townsend?Huxley Experiment

Australian Journal of Physics ◽

10.1071/ph730469 ◽

1973 ◽

Vol 26 (4) ◽

pp. 469 ◽

Cited By ~ 17

Author(s):

JJ Lowke

Keyword(s):

Experimental Data ◽

Electric Field ◽

Electron Mobility ◽

Diffusion Coefficients ◽

Applied Electric Field ◽

Anisotropic Diffusion ◽

Diffusion Tubes ◽

New Formula ◽

The Relationship ◽

Diffusion Tube

The relationship between current ratios and electron diffusion coefficients for the Townsend-Huxley experiment is reanalysed with the assumption that diffusion can be represented by two coefficients DT and DL for diffusion transverse and parallel respectively to the applied electric field. When the new formula is used to interpret previous experimental data obtained with a diffusion tube of length 2 cm, the derived values of DT/fl become independent of pressure (fl being the electron mobility). For longer diffusion tubes (~ 6 cm), current ratios are insensitive to DL and the results differ insignificantly from those obtained using the formula previously derived on the assumption that diffusion is isotropic.

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