Silicon Nanophotonic Devices for On-chip Optical Modulation and Switching

Author(s):  
Daoxin Dai ◽  
Lijia Song ◽  
Bingchen Pan
Author(s):  
D. Van Thourhout ◽  
I. O’Connor ◽  
A. Scandurra ◽  
L. Liu ◽  
W. Bogaerts ◽  
...  

2021 ◽  
Author(s):  
Yun-Da Hsieh ◽  
Jun-Han Lin ◽  
Richard Soref ◽  
Greg Sun ◽  
Hung-Hsiang Cheng ◽  
...  

Abstract Si-based electronic-photonic integrated circuits (EPICs), which are compatible with state-of-the-art complementary metal-oxide-semiconductor (CMOS) processes, offer promising opportunities for on-chip mid-infrared (MIR) photonic systems. However, the lack of efficient MIR optical modulators on Si hinders the utilization of MIR EPICs. Here, we clearly demonstrate the Franz-Keldysh (FK) effect in GeSn alloys and achieve on-Si MIR electro-absorption optical modulation using GeSn heterostructures. Our experimental and theoretical results verify that the direct bandgap energy of GeSn can be widely tuned by varying the Sn content, thereby realizing wavelength-tunable optical modulation in the MIR range with a figure-of-merit of Δα /α0 (FOM) greater than 1.5 and a broadband operating range greater than 140 nm. In contrast to conventional silicon-photonic modulators based on the plasma dispersion effect, our GeSn heterostructure demonstrates practical and effective FK MIR optical modulation on Si and helps unlock the potential of MIR EPICs for a wide range of applications.


2020 ◽  
Vol 10 (18) ◽  
pp. 6365
Author(s):  
Hongnan Xu ◽  
Daoxin Dai ◽  
Yaocheng Shi

Mode-division multiplexing (MDM) technology has drawn tremendous attention for its ability to expand the link capacity within a single-wavelength carrier, paving the way for large-scale on-chip data communications. In the MDM system, the signals are carried by a series of higher-order modes in a multi-mode bus waveguide. Hence, it is essential to develop on-chip mode-handling devices. Silicon-on-insulator (SOI) has been considered as a promising platform to realize MDM since it provides an ultra-high-index contrast and mature fabrication processes. In this paper, we review the recent progresses on silicon integrated nanophotonic devices for MDM applications. We firstly discuss the working principles and device configurations of mode (de)multiplexers. In the second section, we summarize the multi-mode routing devices, including multi-mode bends, multi-mode crossings and multi-mode splitters. The inverse-designed multi-mode devices are then discussed in the third section. We also provide a discussion about the emerging reconfigurable MDM devices in the fourth section. Finally, we offer our outlook of the development prospects for on-chip multi-mode photonics.


Author(s):  
Jia-Yang Chen ◽  
Yong Meng Sua ◽  
Zi-Tong Zhao ◽  
Mo Li ◽  
Yu-Ping Huang

2011 ◽  
Vol 5 (2) ◽  
pp. 84 ◽  
Author(s):  
M. Notomi ◽  
A. Shinya ◽  
K. Nozaki ◽  
T. Tanabe ◽  
S. Matsuo ◽  
...  

2021 ◽  
Vol 41 (8) ◽  
pp. 0823001
Author(s):  
廖琨 Liao Kun ◽  
甘天奕 Gan Tianyi ◽  
胡小永 Hu Xiaoyong ◽  
龚旗煌 Gong Qihuang
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