Effect of interfacial reaction layer on the brittle fracture of the SAC305 solder joint on ENIG and ENEPIG surface finish

Author(s):  
Sang-Hyun Kwon ◽  
Kang-Dong Kim ◽  
Deok-Gon Han ◽  
Tae-Hyun Sung ◽  
Chang-Woo Lee ◽  
...  
2006 ◽  
Vol 512 ◽  
pp. 355-360
Author(s):  
Akio Hirose ◽  
Tomoyuki Hiramori ◽  
Mototaka Ito ◽  
Yoshiharu Tanii ◽  
Kojiro F. Kobayashi

Sn-3.5Ag (Sn-Ag) and Sn-3.5Ag-0.75Cu (Sn-Ag-Cu) solder balls were reflowed on electroless Ni-P/Au plated Cu pad with varying thickness of Au layer (0 to 500nm). In the Sn-Ag solder joint, a P-rich layer including voids, which resulted from Ni diffusion from the Ni-P plating to form Ni3Sn4 interfacial reaction layer, formed at the interface regardless of Au plating thickness. This caused the degradation of the joint strength. On the contrary, the Sn-Ag-Cu solder joint had no continuous P-rich layer formed and showed a higher joint strength than the Sn-Ag solder joint in the case of Au plating of 50nm or less. Cu alloying to the solder promote the formation of (Cu, Ni)6Sn5 instead to Ni3Sn4 as the interfacial reaction layer. The (Cu, Ni)6Sn5 reaction layer can suppress the diffusion of Ni from the N-P plating and thereby inhibit the formation of the P-rich layer. However, in the case of thick Au plating of 250nm or more, a thin P-rich layer formed at the interface even in the Sn-Ag-Cu solder joint and the joint strength was degraded. Au dissolving into the solder from the Au plating during the reflow process may encourage the diffusion of Ni from the Ni-P plating into the solder. As a result, the Sn-Ag-Cu solder joints with 50nm Au coating provided the best joint strength, although its joint strength considerably degraded after the aging treatment at 423K.


2011 ◽  
Vol 22 (9) ◽  
pp. 1308-1312 ◽  
Author(s):  
Han-Byul Kang ◽  
Jee-Hwan Bae ◽  
Jeong-Won Yoon ◽  
Seung-Boo Jung ◽  
Jongwoo Park ◽  
...  

Crystals ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 727
Author(s):  
Bofang Zhou ◽  
Taohua Li ◽  
Hongxia Zhang ◽  
Junliang Hou

The interface behavior of brazing between Zr-Cu filler metal and SiC ceramic was investigated. Based on the brazing experiment, the formation of brazing interface products was analyzed using OM, SEM, XRD and other methods. The stable chemical potential phase diagram was established to analyze the possible diffusion path of interface elements, and then the growth behavior of the interface reaction layer was studied by establishing relevant models. The results show that the interface reaction between the active element Zr and SiC ceramic is the main reason in the brazing process the interface products are mainly ZrC and Zr2Si and the possible diffusion path of elements in the product formation process is explained. The kinetic equation of interfacial reaction layer growth is established, and the diffusion constant (2.1479 μm·s1/2) and activation energy (42.65 kJ·mol−1) are obtained. The growth kinetics equation of interfacial reaction layer thickness with holding time at different brazing temperatures is obtained.


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