Customized Thinning of Silicon-based Neural Probes Down to 2 µm

Author(s):  
Elisabeth Otte ◽  
Valerian Cziumplik ◽  
Patrick Ruther ◽  
Oliver Paul
Keyword(s):  
2016 ◽  
Vol 13 (4) ◽  
pp. 046018 ◽  
Author(s):  
Frédéric Michon ◽  
Arno Aarts ◽  
Tobias Holzhammer ◽  
Patrick Ruther ◽  
Gustaaf Borghs ◽  
...  

Micromachines ◽  
2018 ◽  
Vol 9 (3) ◽  
pp. 131 ◽  
Author(s):  
Andreas Schander ◽  
Heiko Stemmann ◽  
Andreas Kreiter ◽  
Walter Lang

2019 ◽  
Vol 13 ◽  
Author(s):  
Laetitia Chauvière ◽  
Frederick Pothof ◽  
Kai S. Gansel ◽  
Johanna Klon-Lipok ◽  
Arno A. A. Aarts ◽  
...  
Keyword(s):  

2021 ◽  
Vol 22 (21) ◽  
pp. 11528
Author(s):  
Bangbang Guo ◽  
Ye Fan ◽  
Minghao Wang ◽  
Yuhua Cheng ◽  
Bowen Ji ◽  
...  

With the rapid increase in the use of optogenetics to investigate nervous systems, there is high demand for neural interfaces that can simultaneously perform optical stimulation and electrophysiological recording. However, high-magnitude stimulation artifacts have prevented experiments from being conducted at a desirably high temporal resolution. Here, a flexible polyimide-based neural probe with polyethylene glycol (PEG) packaged optical fiber and Pt-Black/PEDOT-GO (graphene oxide doped poly(3,4-ethylene-dioxythiophene)) modified microelectrodes was developed to reduce the stimulation artifacts that are induced by photoelectrochemical (PEC) and photovoltaic (PV) effects. The advantages of this design include quick and accurate implantation and high-resolution recording capacities. Firstly, electrochemical performance of the modified microelectrodes is significantly improved due to the large specific surface area of the GO layer. Secondly, good mechanical and electrochemical stability of the modified microelectrodes is obtained by using Pt-Black as bonding layer. Lastly, bench noise recordings revealed that PEC noise amplitude of the modified neural probes could be reduced to less than 50 µV and no PV noise was detected when compared to silicon-based neural probes. The results indicate that this device is a promising optogenetic tool for studying local neural circuits.


Biomaterials ◽  
2015 ◽  
Vol 37 ◽  
pp. 25-39 ◽  
Author(s):  
Takashi D.Y. Kozai ◽  
Kasey Catt ◽  
Xia Li ◽  
Zhannetta V. Gugel ◽  
Valur T. Olafsson ◽  
...  

2015 ◽  
Vol 120 ◽  
pp. 952-955 ◽  
Author(s):  
Falk Barz ◽  
Patrick Ruther ◽  
Shoji Takeuchi ◽  
Oliver Paul

1999 ◽  
Vol 09 (PR8) ◽  
pp. Pr8-101-Pr8-107
Author(s):  
F. J. Martí ◽  
A. Castro ◽  
J. Olivares ◽  
C. Gómez-Aleixandre ◽  
J. M. Albella
Keyword(s):  

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-861-Pr3-867 ◽  
Author(s):  
S. M. Zemskova ◽  
J. A. Haynes ◽  
K. M. Cooley

1996 ◽  
Vol 444 ◽  
Author(s):  
Hyeon-Seag Kim ◽  
D. L. Polla ◽  
S. A. Campbell

AbstractThe electrical reliability properties of PZT (54/46) thin films have been measured for the purpose of integrating this material with silicon-based microelectromechanical systems. Ferroelectric thin films of PZT were prepared by metal organic decomposition. The charge trapping and degradation properties of these thin films were studied through device characteristics such as hysteresis loop, leakage current, fatigue, dielectric constant, capacitancevoltage, and loss factor measurements. Several unique experimental results have been found. Different degradation processes were verified through fatigue (bipolar stress), low and high charge injection (unipolar stress), and high field stressing (unipolar stress).


1996 ◽  
Vol 444 ◽  
Author(s):  
H. Okumoto ◽  
M. Shimomura ◽  
N. Minami ◽  
Y. Tanabe

AbstractSilicon-based polymers with σconjugated electrons have specific properties; photoreactivity for microlithography and photoconductivity for hole transport materials. To explore the possibility of combining these two properties to develop photoresists with electronic transport capability, photoconductivity of polysilanes is investigated in connection with their photoinduced chemical modification. Increase in photocurrent is observed accompanying photoreaction of poly(dimethylsilane) vacuum deposited films. This increase is found to be greatly enhanced in oxygen atmosphere. Such changes of photocurrent can be explained by charge transfer to electron acceptors from Si dangling bonds postulated to be formed during photoreaction.


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