Circuit modeling of the ISO 10605 field coupled electrostatic discharge test to design robust automotive integrated circuits

Author(s):  
Niels Lambrecht ◽  
Daniel De Zutter ◽  
Dries Vande Ginste ◽  
Hugo Pues
Electronics ◽  
2021 ◽  
Vol 10 (4) ◽  
pp. 454
Author(s):  
You Wang ◽  
Yu Mao ◽  
Qizheng Ji ◽  
Ming Yang ◽  
Zhaonian Yang ◽  
...  

Gate-grounded tunnel field effect transistors (ggTFETs) are considered as basic electrostatic discharge (ESD) protection devices in TFET-integrated circuits. ESD test method of transmission line pulse is used to deeply analyze the current characteristics and working mechanism of Conventional TFET ESD impact. On this basis, a SiGe Source/Drain PNN (P+N+N+) tunnel field effect transistors (TFET) was proposed, which was simulated by Sentaurus technology computer aided design (TCAD) software. Simulation results showed that the trigger voltage of SiGe PNN TFET was 46.3% lower, and the failure current was 13.3% higher than Conventional TFET. After analyzing the simulation results, the parameters of the SiGe PNN TFET were optimized. The single current path of the SiGe PNN TFET was analyzed and explained in the case of gate grounding.


2013 ◽  
Vol 753-755 ◽  
pp. 2170-2174
Author(s):  
Tian Hai Chang ◽  
Meng Yao Fu ◽  
Pei Pei Yin

This paper, on the basis of the electrostatic discharge test of mobile user terminals and electrostatic parameters measurement of human body, got electrostatic potential of human body in different condition. The results show that the main factors effecting human body electrostatic are environmental relative humidity, humans dressing, human activities and so on. Then error between the experimental measurement data and the theoretical analysis result are analyzed. Finally proposed some protective measures according to the harm of human body electrostatic to mobile user terminal.


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