A comprehensive investigation on the short circuit performance of MW-level IGBT power modules

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

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Discussion on “The high-rupturing-capacity cartridge fuse, with special reference to short-circuit performance” before the South Midland Centre, at Birmingham, 26th February, 1940

Journal of the Institution of Electrical Engineers - Part II Power Engineering ◽

10.1049/ji-2.1941.0004 ◽

1941 ◽

Vol 88 (1) ◽

pp. 29-32

Keyword(s):

Special Reference ◽

Short Circuit ◽

The South ◽

Circuit Performance

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Short circuit performance of transformers in solar PV systems

10.1109/aupec52110.2021.9597798 ◽

2021 ◽

Author(s):

V. Sreeram ◽

M. Rajkumar ◽

S. S. Reddy ◽

T. Gurudev ◽

Maroti

Keyword(s):

Short Circuit ◽

Solar Pv ◽

Circuit Performance ◽

Pv Systems

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Investigation on the degradation indicators of short-circuit tests in 1.2 kV SiC MOSFET power modules

Microelectronics Reliability ◽

10.1016/j.microrel.2018.06.039 ◽

2018 ◽

Vol 88-90 ◽

pp. 661-665 ◽

Cited By ~ 5

Author(s):

H. Du ◽

P.D. Reigosa ◽

F. Iannuzzo ◽

L. Ceccarelli

Keyword(s):

Short Circuit ◽

Power Modules

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Demonstration of Superior Static, Dynamic, and Short-Circuit Performance of 1.2 kV 4H-SiC Split-Gate Octagonal Cell MOSFETs Compared with Linear, Square, and Hexagonal Topologies

Materials Science Forum ◽

10.4028/www.scientific.net/msf.1004.783 ◽

2020 ◽

Vol 1004 ◽

pp. 783-788

Author(s):

Ki Jeong Han ◽

Ajit Kanale ◽

B. Jayant Baliga ◽

Subhashish Bhattacharya

Keyword(s):

Energy Loss ◽

High Frequency ◽

Figure Of Merit ◽

Short Circuit ◽

Electrical Characteristics ◽

Circuit Performance ◽

Switching Performance ◽

Switching Energy ◽

Cell Topology ◽

Linear Cell

The electrical characteristics of the 1.2-kV rated 4H-SiC accumulation-channel split-gate octagonal cell MOSFET (SG-OCTFET) are experimentally compared with linear, square, hexagonal, octagonal, and compact-octagonal cell topologies. The specific on-resistance of the SG-OCTFET is 52% larger than the conventional linear cell topology. However, the SG-OCTFET has: (i) high-frequency figure-of-merit HFFOM[Ron×Cgd] 9.4×, 6.1×, 2.6×, 2.0×, and 1.8× superior to the square, hex, linear, octagonal, and compact-octagonal cells; (ii) fastest switching performance among all cell topologies, with 26% smaller switching energy loss than the conventional linear cell topology; and (iii) short circuit capability 1.5× longer than the conventional linear cell topology. The SG-OCTFET device is therefore an optimum candidate for high frequency applications of SiC MOSFETs.

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