Analytical Model for the Electrodynamical Forces inside Electrical Contacts of Commutation Devices

2019 ◽  
Author(s):  
Alexandra Popescu ◽  
Emil Lazarescu ◽  
Flaviu M. Frigura-Iliasa ◽  
Lia Dolga ◽  
Hannelore E. Filipescu ◽  
...  
Keyword(s):  
Analytical Model ◽  
Electrical Contacts

A Predictive Model for Variation in the Pitch Between Stamped Pilot Holes

2003 ◽  
Vol 125 (2) ◽  
pp. 384-393 ◽  
Author(s):  
R. Ryan Vallance ◽  
Sepehr Kiani
Keyword(s):  
Predictive Model ◽  
Analytical Model ◽  
Sensitivity Study ◽  
Electrical Contacts ◽  
Design Parameters ◽  
Progressive Die ◽  
Model Match ◽  
Pitch Distance

This paper presents an analytical model for predicting the variation in the pitch distance between pilot holes stamped with a progressive die. The model is useful in designing diesets since it relates pitch variation to dieset parameters such as the quantity of pilot pins, clearance in the stripper plate bearings, clearance about the punch, and clearance about the pilot pins. The efficacy of the predictive model is demonstrated with a sensitivity study of design parameters in an exemplary dieset used to stamp electrical contacts. Predictions from the model match previously measured variation within about twenty-four percent.

TEM characterization of Au/Polysilicon interactions

1990 ◽  
Vol 48 (4) ◽  
pp. 650-651
Author(s):  
N. David Theodore ◽  
Leslie H. Allen ◽  
C. Barry Carter ◽  
James W. Mayer
Keyword(s):  
Solid Phase ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Electrical Contacts ◽  
Silicon Substrates ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Polysilicon Films ◽  
The Stability

Metal/polysilicon investigations contribute to an understanding of issues relevant to the stability of electrical contacts in semiconductor devices. These investigations also contribute to an understanding of Si lateral solid-phase epitactic growth. Metals such as Au, Al and Ag form eutectics with Si. reactions in these metal/polysilicon systems lead to the formation of large-grain silicon. Of these systems, the Al/polysilicon system has been most extensively studied. In this study, the behavior upon thermal annealing of Au/polysilicon bilayers is investigated using cross-section transmission electron microscopy (XTEM). The unique feature of this system is that silicon grain-growth occurs at particularly low temperatures ∽300°C).Gold/polysilicon bilayers were fabricated on thermally oxidized single-crystal silicon substrates. Lowpressure chemical vapor deposition (LPCVD) at 620°C was used to obtain 100 to 400 nm polysilicon films. The surface of the polysilicon was cleaned with a buffered hydrofluoric acid solution. Gold was then thermally evaporated onto the samples.

ANALYTICAL MODEL OF SUPEREXCHANGE

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-911-C8-912
Author(s):  
Yu. V. Rakitin ◽  
V. T. Kalinnikov
Keyword(s):  
Analytical Model
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