Simulation analysis of switching performance of GaN power transistors in a high-voltage configuration

2020 ◽  
Author(s):  
R. Zelnik ◽  
M. Pipiska
Keyword(s):  
High Voltage ◽  
Simulation Analysis ◽  
Power Transistors ◽  
Switching Performance

Design and Realization of 35kV Phase Controlled Circuit Breaker and its Electromagnetic Force Driving Actuator

2013 ◽  
Vol 380-384 ◽  
pp. 3213-3216
Author(s):  
Hai Yan Wang ◽  
Duan Lei Yuan ◽  
Chen Xu Niu ◽  
Hua Jun Dong
Keyword(s):  
High Voltage ◽  
Simulation Analysis ◽  
Random Phase ◽  
Circuit Breaker ◽  
Transient Simulation ◽  
Test Validation ◽  
Load Force ◽  
Magnetic Actuator ◽  
Phase Selection ◽  
High Voltage Circuit Breaker

In this paper, mainly for the problem that high voltage circuit breaker closing at the random phase can bring hard harmfulness to the power system. We design the 35kV SF6-Phase Control circuit breaker can control speed smartly, and opens or closes with phase selection, which is equipped with the magnetic actuator. In the article, the static and transient simulation analysis which includes the load force, and carried out prototype trial and test validation. At last, the results of simulation and test is given.

EBIC and XTEM Analysis of High Voltage SMOS Reliability Failures

2002 ◽  
Vol 716 ◽  
Author(s):  
Larry Rice
Keyword(s):  
High Voltage ◽  
Focused Ion Beam ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Electrical Characterization ◽  
Operating Conditions ◽  
Oxide Semiconductor ◽  
Power Transistors ◽  
Area Of Interest ◽  
Transmission Electron

AbstractMicroscopists are faced with many challenges in locating and examining failure sites in the ever-shrinking semiconductor device. The site must be located using electrical characterization techniques like electron beam induced current (EBIC), photo emission microscopy (PEM) or liquid crystal (LC) and then cross-sectioned with a focused ion beam (FIB). Both PEM and LC require the semiconductor circuit to be running near operating conditions which has been observed to locally melt the area of interest, frequently destroying evidence of the failure mechanism. In contrast, EBIC typically can be accomplished at low or no applied voltage eliminating further damage to the circuit. EBIC has been applied to locate leakage sites in high voltage metal oxide semiconductor (MOS) electro static discharge (ESD) reliability failures. In addition to a brief revisit of the basic principles of EBIC and describing a technique to successfully cross section ‘hot spots’ for transmission electron microscopy (TEM) observation, focus will be placed on a case study of the reliability testing failure analysis of ESD power transistors using EBIC, SEM, focused ion beam (FIB), and XTEM.

Simulation Analysis of Snubber Circuit for SiC MOSFET Inverter

2014 ◽  
Vol 1070-1072 ◽  
pp. 1241-1245
Author(s):  
Li Jun Xie ◽  
Xian Zheng Liu ◽  
Jin Yuan Li ◽  
Kun Shan Yu
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
High Frequency ◽  
Simulation Analysis ◽  
Pwm Inverter ◽  
Parasitic Inductance ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Snubber Circuit ◽  
Parasitic Parameters

SiC MOSFET, as a promising power semiconductor devices, has attracted attention from many laboratories and companies for its super performance in high temperature, high voltage and high frequency applications. To protect the devices from overvoltage induced by parasitic inductance in high frequency applications, snubber circuit is a must. In this paper, simulation of snubber circuit in a high frequency PWM inverter is invested, under different numbers of snubber circuit , parasitic parameters, different kinds of load and whether a SiC SBD exsits. Some useful conclusions are obtained to help design more perfect snubber circuit.

Comparative Study of SiC MOSFETs in High Voltage Switching Operation

2012 ◽  
Vol 717-720 ◽  
pp. 1081-1084 ◽  
Author(s):  
Tsuyoshi Funaki ◽  
Yuki Nakano ◽  
Takashi Nakamura
Keyword(s):  
Breakdown Voltage ◽  
High Voltage ◽  
Current Density ◽  
Power Device ◽  
Resistive Load ◽  
Density Condition ◽  
Switching Speed ◽  
Switching Operation ◽  
Switching Performance ◽  
Turn On

SiC power device is expected to have high breakdown voltage with low on resistance, which cannot be attainable for conventional Si device. This study evaluates the switching performance of high voltage SiC MOSFETs with comparing to that of conventional Si power MOSFET having equivalent breakdown voltage. To this end, turn-on and turn-off switching operation of MOSFETs are assessed with resistive load for same conduction current density. Though the on resistance of SiC MOSFETs are quite lower than Si MOSFET, especially for trench gate type. But, SiC MOSFETs have larger terminal capacitance. Therefore, SiC MOSFETs show slower switching speed than Si MOSFETs for same current density condition.

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