The formation and growth of intermetallic compounds between Sn-3.5Ag lead-free solder and Cu substrate

Author(s):  
Yu Daquan ◽  
Duan Lilei ◽  
Zhao Jie ◽  
Wang Lai
2005 ◽  
Vol 392 (1-2) ◽  
pp. 192-199 ◽  
Author(s):  
D.Q. Yu ◽  
C.M.L. Wu ◽  
C.M.T. Law ◽  
L. Wang ◽  
J.K.L. Lai

2007 ◽  
Vol 561-565 ◽  
pp. 2115-2118
Author(s):  
Yun Fu ◽  
Qi Zhang ◽  
Feng Sun ◽  
Hao Yu Bai

The growth and morphology of the intermetallic compounds (IMC) formed at the interface between the solder ( Sn–3.5Ag–0.5Cu ) and the Cu substrate of the lead - free solder joint have been investigated by means of isothermal aging at 125°C. The scalloped Cu6Sn5 intermetallic compound layer was formed at the interface between the solder and Cu substrate upon reflow. The thickness of Cu6Sn5 layer increased with aging time. Cu3Sn appeared between Cu6Sn5 layer and Cu substrate when isothermally aged for 100 hours. Compare to Cu6Sn5 , the thickness of Cu3Sn was rather low, and nearly did not increase with aging time. In this paper, the comparison was made among the Sn-Pb and the Sn-Ag-Cu(SAC) solders which were pre-treated differently before soldering.


2020 ◽  
Author(s):  
Manoj Kumar Pal ◽  
Gréta Gergely ◽  
Dániel Koncz-Horváth ◽  
Zoltán Gácsi

Abstract The Sn-3.0Ag-0.5Cu solder alloy is a prominent candidate for the Pb-free solder, and SAC305 solder is generally employed in today’s electronic enterprise. In this study, the formation of intermetallic compounds (Cu6Sn5 and Ag3Sn) at the interface, average neighbour’s particle distance, and the morphological mosaic are examined by the addition of SiC and nickel-coated silicon carbide reinforcements within Sn-3.0Ag-0.5Cu solder. Results revealed that the addition of SiC and SiC(Ni) particles are associated with a small change to the average neighbor’s particle distance and a decrease of clustering rate to a certain limit of the Sn-3.0Ag-0.5Cu solder composites. Moreover, the development of the Cu6Sn5 and the structure of the Ag3Sn are improved with the addition of SiC and Ni coated SiC.


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