Effect of Annealing on Low-Voltage Organic Field-Effect Transistors with P(VDF-TrFE) Gate Dielectric

Author(s):  
Sachin Rahi ◽  
Vivek Raghuwanshi ◽  
Pulkit Saxena ◽  
Gargi Konwar ◽  
Shree Prakash Tiwari
2011 ◽  
Vol 3 (12) ◽  
pp. 4662-4667 ◽  
Author(s):  
Yaorong Su ◽  
Chengliang Wang ◽  
Weiguang Xie ◽  
Fangyan Xie ◽  
Jian Chen ◽  
...  

2018 ◽  
Vol 9 (1) ◽  
pp. 2 ◽  
Author(s):  
Sooji Nam ◽  
Yong Jeong ◽  
Joo Kim ◽  
Hansol Yang ◽  
Jaeyoung Jang

Here, we report on the use of a graphene oxide (GO)/polystyrene (PS) bilayer as a gate dielectric for low-voltage organic field-effect transistors (OFETs). The hydrophilic functional groups of GO cause surface trapping and high gate leakage, which can be overcome by introducing a layer of PS—a hydrophobic polymer—onto the top surface of GO. The GO/PS gate dielectric shows reduced surface roughness and gate leakage while maintaining a high capacitance of 37.8 nF cm−2. The resulting OFETs show high-performance operation with a high mobility of 1.05 cm2 V−1 s−1 within a low operating voltage of −5 V.


2010 ◽  
Vol 22 (4) ◽  
pp. 1559-1566 ◽  
Author(s):  
Xiaoyang Cheng ◽  
Mario Caironi ◽  
Yong-Young Noh ◽  
Jianpu Wang ◽  
Christopher Newman ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document