The effect of gate dielectric deposition at different vacuum conditions on the field-effect mobility of pentacene based organic field effect transistors

2017 ◽  
Vol 636 ◽  
pp. 485-489 ◽  
Author(s):  
Sajal Biring ◽  
Ya-Ze Li ◽  
Chih-Chien Lee ◽  
Arvind Pan ◽  
Yan-De Li ◽  
...  
2004 ◽  
Vol 19 (7) ◽  
pp. 1999-2002 ◽  
Author(s):  
Ch. Pannemann ◽  
T. Diekmann ◽  
U. Hilleringmann

This article reports degradation experiments on organic thin film transistors using the small organic molecule pentacene as the semiconducting material. Starting with degradation inert p-type silicon wafers as the substrate and SiO2 as the gate dielectric, we show the influence of temperature and exposure to ambient air on the charge carrier field-effect mobility, on-off-ratio, and threshold-voltage. The devices were found to have unambiguously degraded over 3 orders of magnitude in maximum on-current and charge carrier field-effect mobility, but they still operated after a period of 9 months in ambient air conditions. A thermal treatment was carried out in vacuum conditions and revealed a degradation of the charge carrier field-effect mobility, maximum on-current, and threshold voltage.


2021 ◽  
Vol 9 (1) ◽  
pp. 77-81
Author(s):  
Sungmi Yoo ◽  
Hyunjin Park ◽  
Yong Seok Kim ◽  
Jong Chan Won ◽  
Dong-Gyun Kim ◽  
...  

A multifunctional gate dielectric for organic field-effect transistors is presented by tailoring dual covalent and noncovalent cross-links in aromatic polythiourea networks.


2011 ◽  
Vol 3 (12) ◽  
pp. 4662-4667 ◽  
Author(s):  
Yaorong Su ◽  
Chengliang Wang ◽  
Weiguang Xie ◽  
Fangyan Xie ◽  
Jian Chen ◽  
...  

2014 ◽  
Vol 126 ◽  
pp. 55-58 ◽  
Author(s):  
L. Valentini ◽  
S. Bittolo Bon ◽  
M. Cardinali ◽  
E. Fortunati ◽  
J.M. Kenny

2016 ◽  
Vol 28 ◽  
pp. 139-146 ◽  
Author(s):  
Yonghwa Baek ◽  
Sooman Lim ◽  
Lae Ho Kim ◽  
Seonuk Park ◽  
Seung Woo Lee ◽  
...  

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