Joint sizing and adaptive independent gate control for FinFET circuits operating in multiple voltage regimes using the logical effort method

Author(s):  
Xue Lin ◽  
Yanzhi Wang ◽  
Massoud Pedram
AIP Advances ◽  
2018 ◽  
Vol 8 (1) ◽  
pp. 015129 ◽  
Author(s):  
Yoska Anugrah ◽  
Jiaxi Hu ◽  
Gordon Stecklein ◽  
Paul A. Crowell ◽  
Steven J. Koester

2008 ◽  
Vol 16 (12) ◽  
pp. 1657-1665 ◽  
Author(s):  
Jente B. Kuang ◽  
Keunwoo Kim ◽  
Ching-Te Chuang ◽  
Hung C. Ngo ◽  
Fadi H. Gebara ◽  
...  

Author(s):  
H.-J. Ou ◽  
J. M. Cowley ◽  
A. A. Higgs

A scanning ion gun system has been installed on the specimen preparation chamber (pressure ∼5xl0-8 torr) of the VG-HB5 STEM microscope. By using the specimen current imaging technique, it is possible to use an ion beam to sputter-clean the preferred surface region on a bulk sample. As shown in figure 1, the X-Y raster-gate control of the scanning unit for the Krato Mini-Beam I is used to minimize the beam raster area down to a 800μm x800μm square region. With beam energy of 2.5KeV, the MgO cleavage surface has been ion sputter-cleaned for less than 1 minute. The carbon film or other contaminant, introduced during the cleavage process in air, is mostly removed from the MgO crystal surfaces.The immediate SREM inspection of this as-cleaned MgO surface, within the adjacent STEM microscope, has revealed the detailed surface structures of atomic steps, which were difficult to observe on the as-cleaved MgO surfaces in the previous studies.


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