Study on the reliability of AlGaN/GaN HEMTs at high temperature

2011 ◽  
Author(s):  
Yang Juan ◽  
Zhang Xiaoling ◽  
Lv Changzhi
Keyword(s):  
High Temperature ◽  
Gan Hemts

Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature

2022 ◽  
pp. 1-5
Author(s):  
Yajie Xin ◽  
Wanjun Chen ◽  
Ruize Sun ◽  
Xiaochuan Deng ◽  
Zhaoji Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Short Channel ◽  
Channel Power ◽  
Gan Hemts

Degradation of 0.25 μm GaN HEMTs under high temperature stress test

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1667-1671 ◽  
Author(s):  
M. Dammann ◽  
M. Baeumler ◽  
P. Brückner ◽  
W. Bronner ◽  
S. Maroldt ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
Stress Test ◽  
High Temperature Stress ◽  
Gan Hemts

High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

2006 ◽  
Vol 48 (11) ◽  
pp. 2303-2305 ◽  
Author(s):  
M. Werquin ◽  
D. Ducatteau ◽  
N. Vellas ◽  
E. Delos ◽  
Y. Cordier ◽  
...  
Keyword(s):  
High Temperature ◽  
Gan Hemts ◽  
Pulsed Measurements

Ir/Al multilayer Gates for High Temperature Operated AlGaN/GaN HEMTs

2017 ◽  
Vol 214 (12) ◽  
pp. 1700691 ◽  
Author(s):  
Tibor Lalinský ◽  
Gabriel Vanko ◽  
Edmund Dobročka ◽  
Jozef Osvald ◽  
Oleg Babchenko ◽  
...  
Keyword(s):  
High Temperature ◽  
Gan Hemts

High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs

2021 ◽  
pp. 1-6
Author(s):  
M. Millesimo ◽  
C. Fiegna ◽  
N. Posthuma ◽  
M. Borga ◽  
B. Bakeroot ◽  
...  
Keyword(s):  
High Temperature ◽  
Time Dependent ◽  
Gan Hemts ◽  
Temperature Time

High-Temperature Operation of AlGaN/GaN HEMTs Direct-Coupled FET Logic (DCFL) Integrated Circuits

2007 ◽  
Vol 28 (5) ◽  
pp. 328-331 ◽  
Author(s):  
Yong Cai ◽  
Zhiqun Cheng ◽  
Zhenchuan Yang ◽  
Chak Wah Tang ◽  
Kei May Lau ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Gan Hemts ◽  
High Temperature Operation
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