Characterization of leakage current on high voltage glass insulators using wavelet transform technique

Author(s):  
Nasir Ahmed Algeelani ◽  
M. Afendi M. Piah

A huge amount of exploration propagated over the past decade investigates the characterization of Partial Discharge (PD) inception in cable ideology. Underground cables are passed down as surrogate for over hauling in congested areas. The intention of this research is to examine the feasibility of exploring insulation defects present in High Voltage (HV) Cable setup by employing PD disclosure under alternating current (AC) Voltage. Study of PD characteristics has a congregate of predictable distinguished contraption to prove the probity and the affirmation of electrical insulation of Power System. In this work, the cable is exposed into the measurement of PD signal under artificially conceived defects. PD signal parameters are mainly depends on the size of void and applied voltage. In general, the measured PD signal is depraved with interferences. To identify the exact characteristics of PD distinctive and its severity, the PD signal is subjected to Wavelet Transform (WT) for denoising. Different types of WT families with various level is used for de-noising. To identify the effectiveness of the WT for de-noising guidelines like Signal to Reconstruction Error Ratio (SRER) and Reduction in Noise Level (RNL) are used.


1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.


Author(s):  
CAIXIA DENG ◽  
YULING QU ◽  
LIJUAN GU

In this paper, Journe wavelet function is introduced as a wavelet generating function. The expression of reproducing kernel function for the image space of this wavelet transform is obtained based on the fact that the image space of the wavelet transform is a reproducing kernel Hilbert space. Then the isometric identity of Journe wavelet transform is obtained. The connections between the image space of the wavelet transform and the image space of the known reproducing kernel space are established by the theories of reproducing kernel. The properties and the structures of the image space of the wavelet transform can be characterized by the properties and the structures of the image space of the known reproducing kernel space. Using the ideas of reproducing kernel, we consider there are relations between the wavelet transform and the sampling theorem. Meanwhile, the approximations in sampling theorems is shown and the truncation error is given. This provides a theoretical basis for us to study the image space of the general wavelet transform and broadens the scope of application of theories of the reproducing kernel space.


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