A new effective channel length determination method for LDD MOSFETs

Proceedings of the 1991 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1990.161744 ◽

2002 ◽

Author(s):

K. Takeuchi ◽

N. Kasai ◽

K. Terada

Keyword(s):

Channel Length ◽

Determination Method ◽

Length Determination ◽

Effective Channel

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An effective channel length determination method for LDD MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/16.485541 ◽

1996 ◽

Vol 43 (4) ◽

pp. 580-587 ◽

Author(s):

K. Takeuchi ◽

N. Kasai ◽

T. Kunio ◽

K. Terada

Keyword(s):

Channel Length ◽

Determination Method ◽

Length Determination ◽

Effective Channel

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Effective channel length determination using punchthrough voltage

ICMTS 92 Proceedings of the 1992 International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1992.185941 ◽

2003 ◽

Author(s):

S. Nakanishi ◽

M. Hoijer ◽

Y. Saitoh ◽

Y. Katoh ◽

Y. Kojima ◽

...

Keyword(s):

Channel Length ◽

Length Determination ◽

Effective Channel

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Effective channel length increased due to switching from ≪110≫ to ≪100≫ orientation for PMOS transistors fabricated by 65 nm CMOS technology

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760686 ◽

2008 ◽

Author(s):

W.S. Lau ◽

Peizhen Yang ◽

V. Ho ◽

B.K. Lim ◽

S.Y. Siah ◽

...

Keyword(s):

Cmos Technology ◽

Channel Length ◽

Effective Channel

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Extraction of metallurgical effective channel length in LDD MOSFET's

IEEE Transactions on Electron Devices ◽

10.1109/16.398660 ◽

1995 ◽

Vol 42 (8) ◽

pp. 1461-1466 ◽

Author(s):

Soonwon Hong ◽

Kwyro Lee

Keyword(s):

Channel Length ◽

Effective Channel

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A possible mechanism for reconciling large gate-drain overlap capacitance with a small difference between polysilicon gate length and effective channel length in an advanced technology PFET

IEEE Electron Device Letters ◽

10.1109/55.701427 ◽

1998 ◽

Vol 19 (7) ◽

pp. 234-236 ◽

Author(s):

R. Young ◽

L. Su ◽

M. Ieong ◽

S. Kapur

Keyword(s):

Small Difference ◽

Channel Length ◽

Advanced Technology ◽

Gate Length ◽

Polysilicon Gate ◽

Effective Channel

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Failure of effective-channel length extraction methods due to the effect of the relative doping level of source and drain in short-channel LDD MOSFETs

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting ◽

10.1109/hkedm.1996.566323 ◽

2002 ◽

Author(s):

Z. Latif ◽

A. Ortiz-Conde ◽

J.J. Liou ◽

F.J.G. Sanchez ◽

W. Wong

Keyword(s):

Doping Level ◽

Extraction Methods ◽

Channel Length ◽

Short Channel ◽

Effective Channel

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A new method to determine effective channel length, series resistance and threshold voltage

Proceedings of International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1996.535635 ◽

2002 ◽

Author(s):

M. Sasaki ◽

H. Ito ◽

T. Horiuchi

Keyword(s):

Threshold Voltage ◽

Series Resistance ◽

Channel Length ◽

Effective Channel

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Principle of operation and performance of 1.3 volt SOI resistor load vertical dual carrier field effect transistor flip flop fabricated for SRAM, FPGA and switching SOC with effective channel length of 30nm

2003 5th International Conference on ASIC Proceedings (IEEE Cat No 03TH8690) ICASIC-03 ◽

10.1109/icasic.2003.1277473 ◽

2003 ◽

Author(s):

Tang ◽

Li ◽

Yang ◽

Yang ◽

Han ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Channel Length ◽

Flip Flop ◽

Effect Transistor ◽

And Performance ◽

Effective Channel ◽

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Effective channel length and parasitic resistance determination in non self-aligned low temperature polycrystalline silicon thin film transistors

Thin Solid Films ◽

10.1016/j.tsf.2009.02.067 ◽

2009 ◽

Vol 517 (23) ◽

pp. 6353-6357 ◽

Author(s):

A. Valletta ◽

M. Rapisarda ◽

L. Mariucci ◽

A. Pecora ◽

G. Fortunato ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Channel Length ◽

Silicon Thin Film ◽

Parasitic Resistance ◽

Effective Channel

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A new extraction method for effective channel length on lightly doped drain MOSFET's

10.1109/icmts.1990.67890 ◽

1990 ◽

Author(s):

J. Ida ◽

A. Kita ◽

F. Ichikawa

Keyword(s):

Extraction Method ◽

Channel Length ◽

Lightly Doped Drain ◽

Effective Channel

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