Extraction of metallurgical effective channel length in LDD MOSFET's

IEEE Transactions on Electron Devices ◽

10.1109/16.398660 ◽

1995 ◽

Vol 42 (8) ◽

pp. 1461-1466 ◽

Author(s):

Soonwon Hong ◽

Kwyro Lee

Keyword(s):

Channel Length ◽

Effective Channel

Download Full-text

Effective channel length increased due to switching from ≪110≫ to ≪100≫ orientation for PMOS transistors fabricated by 65 nm CMOS technology

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760686 ◽

2008 ◽

Author(s):

W.S. Lau ◽

Peizhen Yang ◽

V. Ho ◽

B.K. Lim ◽

S.Y. Siah ◽

...

Keyword(s):

Cmos Technology ◽

Channel Length ◽

Effective Channel

Download Full-text

A possible mechanism for reconciling large gate-drain overlap capacitance with a small difference between polysilicon gate length and effective channel length in an advanced technology PFET

IEEE Electron Device Letters ◽

10.1109/55.701427 ◽

1998 ◽

Vol 19 (7) ◽

pp. 234-236 ◽

Author(s):

R. Young ◽

L. Su ◽

M. Ieong ◽

S. Kapur

Keyword(s):

Small Difference ◽

Channel Length ◽

Advanced Technology ◽

Gate Length ◽

Polysilicon Gate ◽

Effective Channel

Download Full-text

Failure of effective-channel length extraction methods due to the effect of the relative doping level of source and drain in short-channel LDD MOSFETs

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting ◽

10.1109/hkedm.1996.566323 ◽

2002 ◽

Author(s):

Z. Latif ◽

A. Ortiz-Conde ◽

J.J. Liou ◽

F.J.G. Sanchez ◽

W. Wong

Keyword(s):

Doping Level ◽

Extraction Methods ◽

Channel Length ◽

Short Channel ◽

Effective Channel

Download Full-text

A new method to determine effective channel length, series resistance and threshold voltage

Proceedings of International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1996.535635 ◽

2002 ◽

Author(s):

M. Sasaki ◽

H. Ito ◽

T. Horiuchi

Keyword(s):

Threshold Voltage ◽

Series Resistance ◽

Channel Length ◽

Effective Channel

Download Full-text

Principle of operation and performance of 1.3 volt SOI resistor load vertical dual carrier field effect transistor flip flop fabricated for SRAM, FPGA and switching SOC with effective channel length of 30nm

2003 5th International Conference on ASIC Proceedings (IEEE Cat No 03TH8690) ICASIC-03 ◽

10.1109/icasic.2003.1277473 ◽

2003 ◽

Author(s):

Tang ◽

Li ◽

Yang ◽

Yang ◽

Han ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Channel Length ◽

Flip Flop ◽

Effect Transistor ◽

And Performance ◽

Effective Channel ◽

Download Full-text

Effective channel length and parasitic resistance determination in non self-aligned low temperature polycrystalline silicon thin film transistors

Thin Solid Films ◽

10.1016/j.tsf.2009.02.067 ◽

2009 ◽

Vol 517 (23) ◽

pp. 6353-6357 ◽

Author(s):

A. Valletta ◽

M. Rapisarda ◽

L. Mariucci ◽

A. Pecora ◽

G. Fortunato ◽

...

Keyword(s):

Thin Film ◽

Low Temperature ◽

Thin Film Transistors ◽

Polycrystalline Silicon ◽

Channel Length ◽

Silicon Thin Film ◽

Parasitic Resistance ◽

Effective Channel

Download Full-text

A new extraction method for effective channel length on lightly doped drain MOSFET's

10.1109/icmts.1990.67890 ◽

1990 ◽

Author(s):

J. Ida ◽

A. Kita ◽

F. Ichikawa

Keyword(s):

Extraction Method ◽

Channel Length ◽

Lightly Doped Drain ◽

Effective Channel

Download Full-text

A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs

Solid-State Electronics ◽

10.1016/s0038-1101(00)00054-x ◽

2000 ◽

Vol 44 (7) ◽

pp. 1187-1189 ◽

Author(s):

Guofu Niu ◽

Suraj J Mathew ◽

John D Cressler ◽

Seshu Subbanna

Keyword(s):

Series Resistance ◽

Channel Length ◽

Resistance Ratio ◽

Ratio Method ◽

Channel Resistance ◽

Effective Channel

Download Full-text

62‐1: Invited Paper: Highly Stable Self‐Aligned Coplanar InGaZnO Thin‐Film Transistors and Investigation on Effective Channel Length †

SID Symposium Digest of Technical Papers ◽

10.1002/sdtp.13061 ◽

2019 ◽

Vol 50 (1) ◽

pp. 874-877 ◽

Author(s):

Jung Bae Kim ◽

Rodney Lim ◽

Yun-chu (Pipi) Tsai ◽

Jiarui Wang ◽

Lai Zhao ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Channel Length ◽

Effective Channel

Download Full-text

A simple method for effective channel length, series resistance and mobility extraction in deep-submicron MOSFETs

Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. ◽

10.1109/icsict.2004.1436665 ◽

2005 ◽

Author(s):

Chun-li Yu ◽

Yue Hao ◽

Lin-an Yang

Keyword(s):

Series Resistance ◽

Channel Length ◽

Deep Submicron ◽

Simple Method ◽

Effective Channel

Download Full-text