A new extraction method for effective channel length on lightly doped drain MOSFET's

Mapping Intimacies ◽

10.1109/icmts.1990.67890 ◽

1990 ◽

Author(s):

J. Ida ◽

A. Kita ◽

F. Ichikawa

Keyword(s):

Extraction Method ◽

Channel Length ◽

Lightly Doped Drain ◽

Effective Channel

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Improved extraction method for effective channel length of deep-submicrometre MOSFETs

Electronics Letters ◽

10.1049/el:20040162 ◽

2004 ◽

Vol 40 (4) ◽

pp. 274 ◽

Author(s):

S. Lee ◽

S. Youn

Keyword(s):

Extraction Method ◽

Channel Length ◽

Effective Channel

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A Self-Consistent Effective-Channel-Length/External-Resistance Extraction Method for Small-Geometry MOSFET's

10.7567/ssdm.1993.pb-3-13 ◽

1993 ◽

Author(s):

Takaaki Yagi ◽

Mitsuchika Saitoh ◽

Nobuo Mikoshiba

Keyword(s):

Extraction Method ◽

Channel Length ◽

External Resistance ◽

Self Consistent ◽

Effective Channel

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An Improved Shift-and-Ratio Effective Channel Length Extraction Method for Metal Oxide Silicon Transistors with Halo/Pocket Implants

Japanese Journal of Applied Physics ◽

10.1143/jjap.42.2621 ◽

2003 ◽

Vol 42 (Part 1, No. 5A) ◽

pp. 2621-2627 ◽

Author(s):

Chee-Wee Eng ◽

Wai-Shing Lau ◽

David Vigar ◽

James Yong-Meng Lee

Keyword(s):

Metal Oxide ◽

Extraction Method ◽

Channel Length ◽

Silicon Transistors ◽

Metal Oxide Silicon ◽

Effective Channel

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Improved effective channel length extraction method for 0.09-0.13 mm CMOS

10.32657/10356/4118 ◽

2008 ◽

Author(s):

Chee Wee Eng

Keyword(s):

Extraction Method ◽

Channel Length ◽

Effective Channel

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Effective channel length increased due to switching from ≪110≫ to ≪100≫ orientation for PMOS transistors fabricated by 65 nm CMOS technology

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760686 ◽

2008 ◽

Author(s):

W.S. Lau ◽

Peizhen Yang ◽

V. Ho ◽

B.K. Lim ◽

S.Y. Siah ◽

...

Keyword(s):

Cmos Technology ◽

Channel Length ◽

Effective Channel

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Extraction of metallurgical effective channel length in LDD MOSFET's

IEEE Transactions on Electron Devices ◽

10.1109/16.398660 ◽

1995 ◽

Vol 42 (8) ◽

pp. 1461-1466 ◽

Author(s):

Soonwon Hong ◽

Kwyro Lee

Keyword(s):

Channel Length ◽

Effective Channel

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A possible mechanism for reconciling large gate-drain overlap capacitance with a small difference between polysilicon gate length and effective channel length in an advanced technology PFET

IEEE Electron Device Letters ◽

10.1109/55.701427 ◽

1998 ◽

Vol 19 (7) ◽

pp. 234-236 ◽

Author(s):

R. Young ◽

L. Su ◽

M. Ieong ◽

S. Kapur

Keyword(s):

Small Difference ◽

Channel Length ◽

Advanced Technology ◽

Gate Length ◽

Polysilicon Gate ◽

Effective Channel

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Failure of effective-channel length extraction methods due to the effect of the relative doping level of source and drain in short-channel LDD MOSFETs

Proceedings 1996 IEEE Hong Kong Electron Devices Meeting ◽

10.1109/hkedm.1996.566323 ◽

2002 ◽

Author(s):

Z. Latif ◽

A. Ortiz-Conde ◽

J.J. Liou ◽

F.J.G. Sanchez ◽

W. Wong

Keyword(s):

Doping Level ◽

Extraction Methods ◽

Channel Length ◽

Short Channel ◽

Effective Channel

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A new method to determine effective channel length, series resistance and threshold voltage

Proceedings of International Conference on Microelectronic Test Structures ◽

10.1109/icmts.1996.535635 ◽

2002 ◽

Author(s):

M. Sasaki ◽

H. Ito ◽

T. Horiuchi

Keyword(s):

Threshold Voltage ◽

Series Resistance ◽

Channel Length ◽

Effective Channel

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Principle of operation and performance of 1.3 volt SOI resistor load vertical dual carrier field effect transistor flip flop fabricated for SRAM, FPGA and switching SOC with effective channel length of 30nm

2003 5th International Conference on ASIC Proceedings (IEEE Cat No 03TH8690) ICASIC-03 ◽

10.1109/icasic.2003.1277473 ◽

2003 ◽

Author(s):

Tang ◽

Li ◽

Yang ◽

Yang ◽

Han ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Channel Length ◽

Flip Flop ◽

Effect Transistor ◽

And Performance ◽

Effective Channel ◽

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