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High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Field-Effect Transistors [Invited]
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)
◽
10.1109/icmts.2019.8730974
◽
2019
◽
Author(s):
Yasuo Koide
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
High K
Download Full-text
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References
Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks
Japanese Journal of Applied Physics
◽
10.1143/jjap.51.02bc10
◽
2012
◽
Vol 51
(2)
◽
pp. 02BC10
Author(s):
Dongwoo Kim
◽
Seonhaeng Lee
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Cheolgyu Kim
◽
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Field Effect
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Field Effect Transistors
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Metal Oxide Semiconductor
◽
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Gate Stacks
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Hot Carrier
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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack
Applied Physics Letters
◽
10.1063/1.2189456
◽
2006
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Vol 88
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◽
pp. 132107
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◽
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◽
W. Tsai
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Molecular Beam
◽
Field Effect Transistors
◽
Oxide Thickness
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Equivalent Oxide Thickness
◽
Metal Gate
◽
High K
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The design and performance of hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistors with high k oxide HfO2
Micro and Nano Engineering
◽
10.1016/j.mne.2020.100046
◽
2020
◽
Vol 6
◽
pp. 100046
◽
Cited By ~ 2
Author(s):
Chi Sun
◽
Tingting Hao
◽
Junjie Li
◽
Haitao Ye
◽
Changzhi Gu
Keyword(s):
Metal Oxide
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Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
High K
◽
And Performance
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Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts
2009 International Symposium on VLSI Technology, Systems, and Applications
◽
10.1109/vtsa.2009.5159330
◽
2009
◽
Author(s):
Hock-Chun Chin
◽
Xinke Liu
◽
Leng-Seow Tan
◽
Yee-Chia Yeo
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Metal Gate
◽
High K
◽
Cmos Compatible
◽
High K Dielectric
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Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors
Japanese Journal of Applied Physics
◽
10.7567/jjap.50.061503
◽
2011
◽
Vol 50
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◽
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Author(s):
Ryosuke Iijima
◽
Lisa F. Edge
◽
John Bruley
◽
Vamsi Paruchuri
◽
Mariko Takayanagi
Keyword(s):
Metal Oxide
◽
Crystal Orientation
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Silicon Substrates
◽
Metal Gate
◽
High K
◽
Orientation Difference
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Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors
Journal of Applied Physics
◽
10.1063/1.4936313
◽
2015
◽
Vol 118
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◽
pp. 204107
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Cited By ~ 2
Author(s):
V. Djara
◽
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◽
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P. K. Hurley
Keyword(s):
Metal Oxide
◽
Charge Separation
◽
Field Effect
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Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Mobility Analysis
◽
Charge Pumping
◽
High K
◽
Inversion Charge
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Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry
Journal of Applied Physics
◽
10.1063/1.1456246
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2002
◽
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Author(s):
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◽
Stas Kriventsov
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J. H. Haeni
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D. G. Schlom
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Keyword(s):
Metal Oxide
◽
Spectroscopic Ellipsometry
◽
Field Effect
◽
Field Effect Transistors
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Metal Oxide Semiconductor
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Oxide Semiconductor
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High K
◽
Optical Bandgaps
◽
Far Ultraviolet
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Effect of La2O3Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks
Japanese Journal of Applied Physics
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10.7567/jjap.51.02bc10
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Metal Oxide
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Layer Thickness
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Field Effect
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Field Effect Transistors
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Metal Oxide Semiconductor
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Oxide Semiconductor
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Gate Stacks
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Metal Gate
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Hot Carrier
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High K
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Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric
Applied Physics Letters
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2013
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...
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Metal Oxide
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Field Effect
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Gate Dielectric
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Field Effect Transistors
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Metal Oxide Semiconductor
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Oxide Semiconductor
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Hole Injection
◽
Hot Carrier
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High K
◽
Hot Carrier Degradation
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Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high-k gate stack
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Field Effect
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Field Effect Transistors
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Metal Oxide Semiconductor
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Oxide Semiconductor
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Gate Stack
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High K
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