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Schottky source/drain germanium-based metal-oxide-semiconductor field-effect transistors with self-aligned NiGe/Ge junction and aggressively scaled high-k gate stack
Applied Physics Letters
◽
10.1063/1.4938397
◽
2015
◽
Vol 107
(25)
◽
pp. 252104
◽
Cited By ~ 3
Author(s):
Takuji Hosoi
◽
Yuya Minoura
◽
Ryohei Asahara
◽
Hiroshi Oka
◽
Takayoshi Shimura
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Stack
◽
High K
Download Full-text
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References
Characteristics of a band edge p-channel metal-oxide-semiconductor field effect transistors fabricated with a high-k /WAlx/TiSiN gate stack
Applied Physics Letters
◽
10.1063/1.3464167
◽
2010
◽
Vol 97
(2)
◽
pp. 023501
◽
Cited By ~ 2
Author(s):
Chang Seo Park
◽
Muhamad M. Hussain
◽
Gennadi Bersuker
◽
Paul D. Kirsch
◽
Raj Jammy
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Band Edge
◽
Gate Stack
◽
High K
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Ge0.83Sn0.17 P-Channel Metal-Oxide-Semiconductor Field- Effect Transistors: Impact of Sulfur Passivation on Gate Stack Quality
Design, Simulation and Construction of Field Effect Transistors
◽
10.5772/intechopen.74532
◽
2018
◽
Author(s):
Dian Lei
◽
Xiao Gong
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Stack
◽
Sulfur Passivation
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Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks
Japanese Journal of Applied Physics
◽
10.1143/jjap.51.02bc10
◽
2012
◽
Vol 51
(2)
◽
pp. 02BC10
Author(s):
Dongwoo Kim
◽
Seonhaeng Lee
◽
Cheolgyu Kim
◽
Taekyung Oh
◽
Bongkoo Kang
Keyword(s):
Metal Oxide
◽
Layer Thickness
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Stacks
◽
Metal Gate
◽
Hot Carrier
◽
High K
Download Full-text
Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack
Applied Physics Letters
◽
10.1063/1.2189456
◽
2006
◽
Vol 88
(13)
◽
pp. 132107
◽
Cited By ~ 67
Author(s):
A. Ritenour
◽
A. Khakifirooz
◽
D. A. Antoniadis
◽
R. Z. Lei
◽
W. Tsai
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Molecular Beam
◽
Field Effect Transistors
◽
Oxide Thickness
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Equivalent Oxide Thickness
◽
Metal Gate
◽
High K
Download Full-text
The design and performance of hydrogen-terminated diamond metal-oxide-semiconductor field-effect transistors with high k oxide HfO2
Micro and Nano Engineering
◽
10.1016/j.mne.2020.100046
◽
2020
◽
Vol 6
◽
pp. 100046
◽
Cited By ~ 2
Author(s):
Chi Sun
◽
Tingting Hao
◽
Junjie Li
◽
Haitao Ye
◽
Changzhi Gu
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
High K
◽
And Performance
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Impact of H2 High-Pressure Annealing Onto InGaAs Quantum-Well Metal–Oxide–Semiconductor Field-Effect Transistors With Al2O3/HfO2 Gate-Stack
IEEE Electron Device Letters
◽
10.1109/led.2015.2438433
◽
2015
◽
Vol 36
(7)
◽
pp. 672-674
◽
Cited By ~ 15
Author(s):
Tae-Woo Kim
◽
Hyuk-Min Kwon
◽
Seung Heon Shin
◽
Chan-Soo Shin
◽
Won-Kyu Park
◽
...
Keyword(s):
High Pressure
◽
Quantum Well
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Stack
◽
Ingaas Quantum Well
Download Full-text
Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack
Applied Physics Letters
◽
10.1063/1.4821546
◽
2013
◽
Vol 103
(12)
◽
pp. 122106
◽
Cited By ~ 20
Author(s):
Keisuke Yamamoto
◽
Takahiro Sada
◽
Dong Wang
◽
Hiroshi Nakashima
Keyword(s):
Electric Field
◽
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Hole Mobility
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Stack
◽
Metal Source
Download Full-text
High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Field-Effect Transistors [Invited]
2019 IEEE 32nd International Conference on Microelectronic Test Structures (ICMTS)
◽
10.1109/icmts.2019.8730974
◽
2019
◽
Author(s):
Yasuo Koide
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
High K
Download Full-text
Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts
2009 International Symposium on VLSI Technology, Systems, and Applications
◽
10.1109/vtsa.2009.5159330
◽
2009
◽
Author(s):
Hock-Chun Chin
◽
Xinke Liu
◽
Leng-Seow Tan
◽
Yee-Chia Yeo
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Metal Gate
◽
High K
◽
Cmos Compatible
◽
High K Dielectric
Download Full-text
Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors
Japanese Journal of Applied Physics
◽
10.7567/jjap.50.061503
◽
2011
◽
Vol 50
(6R)
◽
pp. 061503
◽
Cited By ~ 1
Author(s):
Ryosuke Iijima
◽
Lisa F. Edge
◽
John Bruley
◽
Vamsi Paruchuri
◽
Mariko Takayanagi
Keyword(s):
Metal Oxide
◽
Crystal Orientation
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Silicon Substrates
◽
Metal Gate
◽
High K
◽
Orientation Difference
Download Full-text
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