Hole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric

Author(s):

Jyun-Yu Tsai ◽

Ting-Chang Chang ◽

Wen-Hung Lo ◽

Ching-En Chen ◽

Szu-Han Ho ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Gate Dielectric ◽

Oxide Semiconductor ◽

Hole Injection ◽

Hot Carrier ◽

High K ◽

Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks

10.1143/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2) ◽

pp. 02BC10

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

Effect of La2O3Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks

10.7567/jjap.51.02bc10 ◽

2012 ◽

Vol 51 (2S) ◽

pp. 02BC10 ◽

Cited By ~ 2

Author(s):

Dongwoo Kim ◽

Seonhaeng Lee ◽

Cheolgyu Kim ◽

Taekyung Oh ◽

Bongkoo Kang

Keyword(s):

Metal Oxide ◽

Layer Thickness ◽

Field Effect ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Metal Gate ◽

Hot Carrier ◽

High K

New Observations on Hot-Carrier Degradation in 0.1 µm Silicon-on-Insulator n-Type Metal Oxide Semiconductor Field Effect Transistors

10.1143/jjap.41.l502 ◽

2002 ◽

Vol 41 (Part 2, No. 5A) ◽

pp. L502-L504

Author(s):

Wen-Kuan Yeh ◽

Wen-Han Wang ◽

Yean-Kuen Fang ◽

Fu-Liang Yang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors of 0.13 µm Technology

10.1143/jjap.47.1527 ◽

2008 ◽

Vol 47 (3) ◽

pp. 1527-1531 ◽

Cited By ~ 7

Author(s):

Shuang-Yuan Chen ◽

Chia-Hao Tu ◽

Jung-Chun Lin ◽

Mu-Chun Wang ◽

Po-Wei Kao ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Elevated Temperatures ◽

Oxide Semiconductor ◽

Hot Carrier ◽

A comparison of early stage hot carrier degradation behaviour in 5 and 3 V sub-micron low doped drain metal oxide semiconductor field effect transistors

Microelectronics Reliability ◽

10.1016/s0026-2714(00)00210-9 ◽

2001 ◽

Vol 41 (2) ◽

pp. 169-177 ◽

Author(s):

M.M. De Souza ◽

J. Wang ◽

S. Manhas ◽

E.M. Sankara Narayanan ◽

A.S. Oates

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Early Stage ◽

Oxide Semiconductor ◽

Degradation Behaviour ◽

Hot Carrier ◽

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

Processing dependences of channel hot-carrier degradation on strained-Si p-channel metal-oxide semiconductor field-effect transistors

10.1116/1.3523396 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01AB07 ◽

Author(s):

E. Amat ◽

J. Martin-Martínez ◽

M. B. Gonzalez ◽

R. Rodríguez ◽

M. Nafría ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Strained Si ◽

Hot Carrier ◽

Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

Applied Physics Letters ◽

10.1063/1.4826918 ◽

2013 ◽

Vol 103 (18) ◽

pp. 183502 ◽

Author(s):

Weichun Luo ◽

Hong Yang ◽

Wenwu Wang ◽

Lichuan Zhao ◽

Hao Xu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Charge Trapping ◽

Oxide Semiconductor ◽

Metal Gate ◽

Hot Carrier ◽

Physical Understanding ◽

High K

Physical Analysis for Saturation Behavior of Hot-Carrier Degradation in Lightly Doped Drain N-Channel Metal-Oxide-Semiconductor Field Effect Transistors

10.1143/jjap.33.606 ◽

1994 ◽

Vol 33 (Part 1, No. 1B) ◽

pp. 606-611 ◽

Cited By ~ 18

Author(s):

Jung-Suk Goo ◽

Hyungsoon Shin ◽

Hyunsang Hwang ◽

Dae-Gwan Kang ◽

Dong-Hyuk Ju

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Physical Analysis ◽

Hot Carrier ◽

Lightly Doped Drain ◽

Hot carrier effect on gate-induced drain leakage current in high-k/metal gate n-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3608241 ◽

2011 ◽

Vol 99 (1) ◽

pp. 012106 ◽

Cited By ~ 27

Author(s):

Chih-Hao Dai ◽

Ting-Chang Chang ◽

Ann-Kuo Chu ◽

Yuan-Jui Kuo ◽

Szu-Han Ho ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Metal Gate ◽

Hot Carrier ◽

Carrier Effect ◽

High K ◽

Hot Carrier Effect

Hot-Carrier Degradation Effects Relevant in Real Operation of Metal Oxide Semiconductor Field Effect Transistors

10.1143/jjap.29.l2275 ◽

1990 ◽

Vol 29 (Part 2, No. 12) ◽

pp. L2275-L2278

Author(s):

Werner Weber ◽

Qin Wang ◽

Martin Brox ◽

Doris Schmitt-Landsiedel

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Oxide Semiconductor ◽

Hot Carrier ◽