Influence of Reverse Recovery Time on In-situ Protective Test of Thyristor Level in the Converter Valve of HVDC Power Transmission

2020 ◽  
Author(s):  
Longchen Liu ◽  
Yuexiao Yu ◽  
Yawei Li ◽  
Jichun Liu ◽  
Minghong Su ◽  
...  
Keyword(s):  
Recovery Time ◽  
Power Transmission ◽  
Reverse Recovery Time

High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode

2014 ◽  
Vol 778-780 ◽  
pp. 841-844 ◽  
Author(s):  
Koji Nakayama ◽  
Shuji Ogata ◽  
Toshihiko Hayashi ◽  
Tetsuro Hemmi ◽  
Atsushi Tanaka ◽  
...  
Keyword(s):  
High Voltage ◽  
Recovery Time ◽  
Carrier Lifetime ◽  
Low Voltage ◽  
Reduction Rate ◽  
Drift Region ◽  
Pin Diode ◽  
Fully Depleted ◽  
Fast Switching ◽  
Reverse Recovery Time

The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated. In a high-voltage 4H-SiC PiN diode, owing to an increased thickness, the drift region does not become fully depleted at a relatively low voltage Furthermore, an electron–hole recombination must be taken into account when the carrier lifetime is equal to or shorter than the reverse recovery time. High voltage and fast switching are therefore needed for accurate analysis of the reverse recovery characteristics. The current reduction rate increases up to 2 kA/μs because of low stray inductance. The maximum reverse voltage during the reverse recovery time reaches 8 kV, at which point the drift layer is fully depleted. The carrier lifetime at the high level injection is 0.086 μs at room temperature and reaches 0.53 μs at 250 °C.

scholarly journals Effects of Electrostatic Discharge Stress on Current-Voltage and Reverse Recovery Time of Fast Power Diode

2014 ◽  
Vol 14 (4) ◽  
pp. 495-502 ◽  
Author(s):  
Daoheung Bouangeune ◽  
Sang-Sik Choi ◽  
Deok-Ho Cho ◽  
Kyu-Hwan Shim ◽  
Sung-Yong Chang ◽  
...  
Keyword(s):  
Recovery Time ◽  
Electrostatic Discharge ◽  
Current Voltage ◽  
Fast Power ◽  
Power Diode ◽  
Reverse Recovery Time

scholarly journals Unexpected microphase transitions in flow towards nematic order of cellulose nanocrystals

Cellulose ◽  
2019 ◽  
Vol 27 (4) ◽  
pp. 2003-2014 ◽  
Author(s):  
Roland Kádár ◽  
Mina Fazilati ◽  
Tiina Nypelö
Keyword(s):  
Liquid Crystal ◽  
Shear Rate ◽  
Formation Process ◽  
Recovery Time ◽  
Continuous Process ◽  
Cellulose Nanocrystal ◽  
Nematic Order ◽  
Chiral Nematic ◽  
Macro Scale

Abstract Organization of nanoparticles is essential in order to control their light-matter interactions. We present cellulose nanocrystal suspension organization in flow towards a unidirectional state. Visualization of evolving polarization patterns of the cellulose nanocrystal suspensions is combined with steady and oscillatory shear rheology. Elucidation of the chiral nematic mesophase in a continuous process towards unidirectional order enables control of alignment in a suspension precursor for structural films and reveals thus far in situ unrevealed transition states that were not detectable by rheology alone. The coupled analytics enabled the suspensions of interest to be divided into rheological gels and rheological liquid crystal fluids with detailed information on the microtransition phases. Both populations experienced submicron organization and reached macro-scale homogeneity with unidirectional ordering in continued shear. We quantify the time, shear rate, and recovery time after shear to design an optimizing formation process for controlled wet structures as precursors for dry products. Graphic abstract

Application of Silicon Carbide Diode in Ultrasound High Voltage Pulse Protection Circuit

2013 ◽  
Vol 290 ◽  
pp. 115-119
Author(s):  
Shi Yuan Zhou ◽  
Kai Zhang ◽  
Dinguo Xiao ◽  
Chun Guang Xu ◽  
Bo Yang
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Voltage Pulse ◽  
Recovery Time ◽  
High Performance ◽  
High Voltage Pulse ◽  
Protection Level ◽  
Protection Circuit ◽  
Reverse Recovery Time

SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode’s high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.

Reverse Recovery Time of Junction Diodes with High Capture Rate of Minority Carriers in the Low Injection Level

1992 ◽  
Vol 31 (Part 1, No. 6A) ◽  
pp. 1836-1837
Author(s):  
Hajime Tomokage ◽  
Tetsuya Yamakawa ◽  
Tokuo Miyamoto ◽  
Masami Morooka
Keyword(s):  
Recovery Time ◽  
Capture Rate ◽  
Injection Level ◽  
Minority Carriers ◽  
Reverse Recovery Time

On-wafer measurement of the reverse-recovery time of integrated diodes by Transmission-Line-Pulsing (TLP)

2011 ◽  
Vol 51 (8) ◽  
pp. 1309-1314 ◽  
Author(s):  
Martin Sauter ◽  
Werner Simbürger ◽  
David Johnsson ◽  
Matthias Stecher
Keyword(s):  
Transmission Line ◽  
Recovery Time ◽  
Reverse Recovery Time
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