Application of Silicon Carbide Diode in Ultrasound High Voltage Pulse Protection Circuit

2013 ◽  
Vol 290 ◽  
pp. 115-119
Author(s):  
Shi Yuan Zhou ◽  
Kai Zhang ◽  
Dinguo Xiao ◽  
Chun Guang Xu ◽  
Bo Yang

SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode’s high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.

2015 ◽  
Vol 2015 (1) ◽  
pp. 000225-000230 ◽  
Author(s):  
Lauren Boteler ◽  
Alexandra Rodriguez ◽  
Miguel Hinojosa ◽  
Damian Urciuoli

The Army is moving to a more electric force with a number of high-voltage applications. To support this transition, there have been efforts to develop high voltage (15–30 kV) single-die 4H-silicon carbide (SiC) bipolar switches and diodes. However, packaging these high-voltage devices has proven to be challenging since standard packaging methods cannot withstand the high voltages in a compact form. Therefore, this work aims to develop a compact prototype package with improved size, weight, and power density by stacking diodes. The stacked diode approach allows elimination of almost half of the wirebonds, reduces the board size by 45%, and reduces the package inductance. A module has been designed, fabricated, and tested which is the first 30 kV module reported in the literature to stack two high-voltage diodes in a series configuration. The package has a number of features specific to high-voltage packaging including (1) two fins that extend the perimeter of the package to mitigate shorting, and (2) all the leads were designed with rounded corners to minimize voltage crowding. Hi-pot tests were performed on the unpopulated package and showed the package can withstand 30 kV without breaking down. The completed package with the stacked diodes showed avalanche breakdown occurring at 29 kV. The complete package was then compared to an equivalent discrete diode module and showed a 10X reduction in size. During a clamped-inductive load test the stacked diodes showed lower parasitic capacitance, faster reverse recovery time, and lower turn on energy as compared to the discrete diode packages.


2018 ◽  
Vol 10 (2) ◽  
pp. 02035-1-02035-6
Author(s):  
O. V. Sobol ◽  
◽  
А. А. Postelnyk ◽  
R. P. Mygushchenko ◽  
V. F. Gorban ◽  
...  

2021 ◽  
Vol 41 ◽  
pp. 102366
Author(s):  
Xiaodong Wang ◽  
Ningjing Li ◽  
Jiaxu Du ◽  
Wenqi Wang

1957 ◽  
Vol 35 (3) ◽  
pp. 324-331 ◽  
Author(s):  
W. A. Prowse ◽  
G. R. Bainbridge

A high voltage pulse lasting 0.35 microsecond is applied to a pair of delay lines, so that two pulses can be picked up from adjustable points of connection on the lines. One is applied to an irradiating gap and the other to a longer test gap, the gaps being so arranged that only mid-gap irradiation occurs. The sparking probability, P, of the test gap is used to indicate the presence of ionizing radiation. Variations of P with the time interval between the two pulses are recorded. They indicate that ionizing radiation is emitted in repeated short flashes. Photographic observations support this view.


2021 ◽  
Vol 220 (1) ◽  
pp. 120-131
Author(s):  
Oleg Kiprijanovič ◽  
Linas Ardaravičius ◽  
Steponas Ašmontas

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