Application of Silicon Carbide Diode in Ultrasound High Voltage Pulse Protection Circuit
2013 ◽
Vol 290
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pp. 115-119
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SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode’s high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.
2018 ◽
Vol 10
(2)
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pp. 02035-1-02035-6
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2014 ◽
Vol 42
(10)
◽
pp. 2909-2912
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