Effects of Electrostatic Discharge Stress on Current-Voltage and Reverse Recovery Time of Fast Power Diode

The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated. In a high-voltage 4H-SiC PiN diode, owing to an increased thickness, the drift region does not become fully depleted at a relatively low voltage Furthermore, an electron–hole recombination must be taken into account when the carrier lifetime is equal to or shorter than the reverse recovery time. High voltage and fast switching are therefore needed for accurate analysis of the reverse recovery characteristics. The current reduction rate increases up to 2 kA/μs because of low stray inductance. The maximum reverse voltage during the reverse recovery time reaches 8 kV, at which point the drift layer is fully depleted. The carrier lifetime at the high level injection is 0.086 μs at room temperature and reaches 0.53 μs at 250 °C.

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Electrostatic Discharge Characteristics of InGaN/GaN Light-Emitting Diodes with Si-Doped Graded Superlattice

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2015.11189 ◽

2015 ◽

Vol 15 (10) ◽

pp. 7733-7737 ◽

Cited By ~ 1

Author(s):

Kwanjae Lee ◽

Cheul-Ro Lee ◽

Jin Soo Kim ◽

Jin Hong Lee ◽

Kee Young Lim ◽

...

Keyword(s):

Light Emission ◽

Electrostatic Discharge ◽

Light Emitting Diode ◽

Emission Spectra ◽

Small Variation ◽

Injection Current ◽

Light Emitting ◽

Current Voltage ◽

Gan Led ◽

Si Doped

We report the influences of a Si-doped graded superlattice (SiGSL) on the electrostatic discharge (ESD) characteristics of an InGaN/GaN light-emitting diode (LED). For comparison, a conventional InGaN/GaN LED (C-LED) was also investigated. The luminous efficacy for the SiGSL-LED was 2.68 times stronger than that for the C-LED at the injection current of 20 mA. The resistances estimated from current–voltage (I–V) characteristic curves were 16.5 and 8.8 Ω for the C-LED and SiGSL-LED, respectively. After the ESD treatment at the voltages of 4000 and 6000 V, there was no significant change in the I–V curves for the SiGSL-LED. Also, there was small variation in the I–V characteristics for the SiGSL-LED at the ESD voltage of 8000 V. However, the I–V curves for the C-LED were drastically degraded with increasing ESD voltage. While the light emission was not observed at the injection current of 20 mA from the C-LED sample after the ESD treatment, the emission spectra for the SiGSL-LED sample were clearly measured with the output powers of 10.47, 9.66, and 7.27 mW for the ESD voltages of 4000, 6000, and 8000 V respectively.

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Electron irradiation for adjusting the reverse recovery time and forward voltage drop characteristics of fast diodes

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(97)00985-3 ◽

1998 ◽

Vol 139 (1-4) ◽

pp. 502-505 ◽

Cited By ~ 1

Author(s):

Elena Iliescu ◽

Anastase Niculescu ◽

Viorel Banu ◽

Anca Nichita ◽

Nicoleta Sturzu

Keyword(s):

Electron Irradiation ◽

Recovery Time ◽

Voltage Drop ◽

Forward Voltage ◽

Forward Voltage Drop ◽

Reverse Recovery Time

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Pulsed Power Modulator With Active Pull-Down Using Diode Reverse Recovery Time

IEEE Transactions on Power Electronics ◽

10.1109/tpel.2019.2924586 ◽

2020 ◽

Vol 35 (3) ◽

pp. 2943-2949

Author(s):

Su-Mi Park ◽

Hong-Je Ryoo

Keyword(s):

Recovery Time ◽

Pulsed Power ◽

Reverse Recovery Time

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Application of Silicon Carbide Diode in Ultrasound High Voltage Pulse Protection Circuit

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.290.115 ◽

2013 ◽

Vol 290 ◽

pp. 115-119

Author(s):

Shi Yuan Zhou ◽

Kai Zhang ◽

Dinguo Xiao ◽

Chun Guang Xu ◽

Bo Yang

Keyword(s):

Silicon Carbide ◽

Schottky Barrier ◽

High Voltage ◽

Voltage Pulse ◽

Recovery Time ◽

High Performance ◽

High Voltage Pulse ◽

Protection Level ◽

Protection Circuit ◽

Reverse Recovery Time

SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode’s high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.

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