The Threshold Voltage Degradation of MOSFET in Heavy-ion Single Event Effect Test

Author(s):  
Zeming Zhang ◽  
Yingqi Ma ◽  
Dan Li ◽  
Chao Tong ◽  
Xiaoxiao Guo ◽  
...  
2019 ◽  
Vol 963 ◽  
pp. 738-741
Author(s):  
Hiroshi Kono ◽  
Teruyuki Ohashi ◽  
Takao Noda ◽  
Kenya Sano

Neutron single event effect (SEE) tolerance of SiC power MOSFETs with different drift region design were evaluated. The SEE is detected over the SEE threshold voltage (VSEE). The failure rate increases exponentially as the drain voltage increases above VSEE. The device with higher avalanche breakdown voltage has higher SEE threshold voltage. The neutron SEE tolerance of MOSFETs and PiN diodes of the same epitaxial structure were also evaluated. There was no significant difference in the neutron SEE tolerance of these devices.


2019 ◽  
Vol 99 ◽  
pp. 119-124 ◽  
Author(s):  
Weitao Yang ◽  
Yonghong Li ◽  
Yang Li ◽  
Zhiliang Hu ◽  
Fei Xie ◽  
...  

2020 ◽  
Vol 67 (1) ◽  
pp. 63-70 ◽  
Author(s):  
Maria Kastriotou ◽  
Pablo Fernandez-Martinez ◽  
Ruben Garcia Alia ◽  
Carlo Cazzaniga ◽  
Matteo Cecchetto ◽  
...  

2007 ◽  
Vol 54 (7) ◽  
pp. 1781-1783 ◽  
Author(s):  
Rahul Shringarpure ◽  
Sameer Venugopal ◽  
Zi Li ◽  
Lawrence T. Clark ◽  
David R. Allee ◽  
...  

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