Impurity effect on internal gettering in Czochralski silicon

2008 ◽  
Author(s):  
Jiahe Chen ◽  
Deren Yang ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Impurity Effect ◽  
Czochralski Silicon

Nitrogen-doped Czochralski silicon treated in rapid thermal process

2006 ◽  
Vol 134 (2-3) ◽  
pp. 193-201 ◽  
Author(s):  
Deren Yang ◽  
Ming Li ◽  
Can Cui ◽  
Xiangyang Ma ◽  
Duanlin Que
Keyword(s):  
Thermal Process ◽  
Rapid Thermal Process ◽  
Nitrogen Doped ◽  
Czochralski Silicon

Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material

2005 ◽  
Vol 108-109 ◽  
pp. 11-16
Author(s):  
Timo Müller ◽  
G. Kissinger ◽  
P. Krottenthaler ◽  
C. Seuring ◽  
R. Wahlich ◽  
...  
Keyword(s):  
High Temperature ◽  
Thermal Treatments ◽  
Low Oxygen ◽  
Zone Formation ◽  
Czochralski Silicon ◽  
Silicon Material ◽  
Free Material ◽  
Precipitation Enhancement

Thermal treatments to enhance precipitation like RTA, ramp anneal and argon anneal were performed on low oxygen 300 mm wafers without vacancy or interstitial agglomerates (“so called” defect-free material). Best results were achieved using high temperature argon anneal leading to a homogenous BMD and denuded zone formation. Furthermore the getter efficiency was positively tested by intentional Ni-contamination. Concepts to overcome the slip danger like improved support geometries and nitrogen codoping were also evaluated and are seen to be beneficial.

Rate Equation Modeling, Ab Initio Calculation, and High Sensitive FTIR Investigations of the Early Stages of Oxide Precipitation in Vacancy-Rich CZ Silicon

2009 ◽  
Vol 156-158 ◽  
pp. 211-216 ◽  
Author(s):  
G. Kissinger ◽  
J. Dabrowski ◽  
V.D. Akhmetov ◽  
Andreas Sattler ◽  
D. Kot ◽  
...  
Keyword(s):  
Ab Initio ◽  
Rate Equation ◽  
Ab Initio Calculation ◽  
Equation Modeling ◽  
Interstitial Oxygen ◽  
Czochralski Silicon ◽  
Early Stages ◽  
Highly Sensitive ◽  
Defect Species ◽  
Ftir Investigation

The results of highly sensitive FTIR investigation, ab initio calculations and rate equation modeling of the early stages of oxide precipitation are compared. The attachment of interstitial oxygen to VOn is energetically more favorable than the attachment to On for n  6. For higher n the energy gain is comparable. The point defect species which were detected by highly sensitive FTIR in high oxygen Czochralski silicon wafers are O1, O2, O3, and VO4. Rate equation modeling for I, V, On and VOn with n = (1..4) also yields O1, O2, O3 to appear with decreasing concentration and VO4 as that one of the VOn species which would appear in the highest concentration after RTA.

The origin of defects in SiO2thermally grown on Czochralski silicon substrates

1995 ◽  
Vol 78 (3) ◽  
pp. 1940-1943 ◽  
Author(s):  
Manabu Itsumi ◽  
Masato Tomita ◽  
Masataka Yamawaki
Keyword(s):  
Silicon Substrates ◽  
Czochralski Silicon

Determination of Sub‐Parts per Billion Boron Contamination in N+ Czochralski Silicon Substrates by SIMS

1994 ◽  
Vol 141 (12) ◽  
pp. 3453-3456 ◽  
Author(s):  
Paul K. Chu ◽  
Roger J. Bleiler ◽  
Jenny M. Metz
Keyword(s):  
Silicon Substrates ◽  
Czochralski Silicon

Nitrogen Implantation and Diffusion in Silicon

1999 ◽  
Vol 568 ◽  
Author(s):  
Lahir Shaik Adam ◽  
Mark E. Law ◽  
Omer Dokumaci ◽  
Yaser Haddara ◽  
Cheruvu Murthy ◽  
...  
Keyword(s):  
Silicon Oxide ◽  
Gate Oxide ◽  
Nitrogen Diffusion ◽  
Nitrogen Implantation ◽  
Oxide Interface ◽  
Diffusion Behavior ◽  
Czochralski Silicon ◽  
Interface Modeling ◽  
And Diffusion ◽  
Silicon Silicon

ABSTRACTNitrogen implantation can be used to control gate oxide thicknesses [1,2]. This study aims at studying the fundamental behavior of nitrogen diffusion in silicon. Nitrogen at sub-amorphizing doses has been implanted as N2+ at 40 keV and 200 keV into Czochralski silicon wafers. Furnace anneals have been performed at a range of temperatures from 650°C through 1050°C. The resulting annealed profiles show anomalous diffusion behavior. For the 40 keV implants, nitrogen diffuses very rapidly and segregates at the silicon/ silicon-oxide interface. Modeling of this behavior is based on the theory that the diffusion is limited by the time to create a mobile nitrogen interstitial.

Coprecipitation of oxygen and carbon in Czochralski silicon: A growth kinetic approach

1995 ◽  
Vol 78 (10) ◽  
pp. 5926-5935 ◽  
Author(s):  
J.‐Y. Huh ◽  
U. Gösele ◽  
T. Y. Tan
Keyword(s):  
Growth Kinetic ◽  
Kinetic Approach ◽  
Czochralski Silicon

Oxygen Precipitation in Conventional and Nitrogen Co-Doped Heavily Arsenic-Doped Czochralski Silicon Crystals: Oswald Ripening

2009 ◽  
Vol 156-158 ◽  
pp. 275-278
Author(s):  
Xiang Yang Ma ◽  
Yan Feng ◽  
Yu Heng Zeng ◽  
De Ren Yang
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Czochralski Silicon ◽  
Silicon Crystals ◽  
Oxygen Precipitation ◽  
High Temperature Anneal ◽  
Oxygen Precipitates ◽  
Co Doped ◽  
Oswald Ripening

Oxygen precipitation (OP) behaviors in conventional and nitrogen co-doped heavily arsenic-doped Czocharalski silicon crystals subjected to low-high two-step anneals of 650 oC/8 h + 1000 oC/4-256 h have been comparatively investigated. Due to the nitrogen enhanced nucleation of OP during the low temperature anneal, much higher density of oxygen precipitates generated in the nitrogen co-doped specimens. With the extension of high temperature anneal, Oswald ripening of OP in the nitrogen co-doped specimens preceded that in the conventional ones. Moreover, due to the Oswald ripening effect, the oxygen precipitates in the conventional specimens became larger with a wider range of sizes. While, the sizes of oxygen precipitates in the nitrogen co-doped specimens distributed in a much narrower range with respect to the conventional ones.

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