Simulation and analysis of actuation voltage of electrostatically actuated RF MEMS cantilever switch

2015 ◽  
Author(s):  
Norshahida Saba ◽  
Norhayati Soin ◽  
Khairun Nisa Khamil
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Electrostatically Actuated

A Feasibility Study on Micro Silicon Cantilever Beam for High Isolation RF MEMS Switch

2007 ◽  
Author(s):  
Lingling Lin ◽  
Feiyan Chen ◽  
Guoqing Hu ◽  
Wenyan Liu ◽  
Baihai Wu
Keyword(s):  
Cantilever Beam ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Dielectric Materials ◽  
Rf Mems Switch ◽  
High Isolation ◽  
Electrostatically Actuated ◽  
Mems Switch ◽  
Silicon Cantilever ◽  
High Contact Force

This paper presents a novel electrostatically actuated microelectromechanical switch. The structure of cantilever beam with electrodes sandwiched between Si and SiO2 layers has been established. Placing the pull-down electrodes outside the switching contact, the actuation voltage can be reduced while keeping high contact force and restoration force. The top and bottom dielectric materials separated two conducting electrodes when actuated. Thus, the reliability and the performance of the switch have been greatly improved. The charts of the deflection of the cantilever beam with respect to the voltage have been simulated with the MATLAB computer programming language.

The Influence of Ambient Pressure on the Dynamic Response of RF MEMS Switches

2010 ◽  
Author(s):  
Avihay Ohana ◽  
Oren Aharon ◽  
Ronen Maimon ◽  
Boris Nepomnyashchy ◽  
Lior Kogut
Keyword(s):  
Rf Mems ◽  
Ambient Pressure ◽  
Actuation Voltage ◽  
Operating Conditions ◽  
Experimental Results ◽  
Release Time ◽  
Q Factor ◽  
Optimal Operating ◽  
Mems Switches ◽  
Rf Mems Switches

A study of the dynamic behavior of an RF MEMS switch is presented at different operating conditions. Experimental results for the actuation and release time and Q-factor as a function of the ambient pressure and actuation voltage are compared to theoretical predictions based on existing model. Optimal operating conditions (ambient pressure and actuation voltage) are determined based on two criterions: minimal actuation and release time and minimal oscillations upon switch release. In light of the experimental results optimal operating conditions determined to be 1.4Vpi at a pressure of a few torrs where actuation and release time are equal and short enough with no release oscillations. Three pressure regimes are identified with characteristic behavior of the Q-factor and actuation and release time in each regime. These behaviors have significant implications in many MEMS devices, especially RF MEMS switches.

scholarly journals Development of Broadband Low Actuation Voltage RF MEM Switches

2002 ◽  
Vol 25 (1) ◽  
pp. 97-111 ◽  
Author(s):  
S. C. Shen ◽  
D. Becher ◽  
Z. Fan ◽  
D. Caruth ◽  
Milton Feng
Keyword(s):  
Insertion Loss ◽  
Integrated Circuit ◽  
Rf Mems ◽  
Low Voltage ◽  
Actuation Voltage ◽  
University Of Illinois ◽  
Mems Switch ◽  
The University ◽  
Better Than ◽  
Millimeter Wave Circuits

Low insertion loss, high isolation RF MEM switches have been thought of as one of the most attractive devices for space-based reconfigurable antenna and integrated circuit applications. Many RF MEMS switch topologies have been reported and they all show superior RF characteristics compared to semiconductor-based counterparts. At the University of Illinois, we developed state-of-the-art broadband low-voltage RF MEM switches using cantilever and hinged topologies. We demonstrated promisingsub-10volts operation for both switch topologies.The switches have an insertion loss of less than 0:1 dB, and an isolation of better than 25 dB over the frequency range from 0.25 to 40 GHz. The RF Model of the MEM switch was also established. The low voltage RF MEM switches will provide a solution for low voltage and highly linear switching methods for the next generation of broadband RF, microwave, and millimeter-wave circuits.

Analysis and Design of a Robust RF MEMS Switch

2012 ◽  
Author(s):  
Ibrahim Chamseddine ◽  
Hadi Kasab ◽  
Maya Antoun ◽  
Tawfiq Dahdah ◽  
Mohammed Mirhi ◽  
...  
Keyword(s):  
Failure Modes ◽  
Rf Mems ◽  
Dielectric Breakdown ◽  
Rf Switch ◽  
Switching Speed ◽  
Analysis And Design ◽  
Electrostatically Actuated ◽  
Mems Switch ◽  
Switching Performance ◽  
Contact Adhesion

A MEMS RF switch is expected to undergo 10 billion switching cycles before failure. Until complete physical explanation for these failure modes that include contact adhesion, damping effects, stiction, increases in resistance with time, dielectric breakdown, and electron trapping is fully established, the technology’s numerous advantages cannot be harvested reliably and efficiently. This paper investigates prospective solutions to problems in switch designs by proposing a new design for the switch. We consider the new design from different perspectives: dynamic, electric, fluidic, etc. It is billed to overcome the difficulties and involves the implementation of liquid metal contact electrostatically actuated to ensure the same switching performance, with prolonged life span, and robust switching speed.

Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Having a Corrugated Bridge

2006 ◽  
Vol E89-C (12) ◽  
pp. 1880-1887 ◽  
Author(s):  
Y.-T. SONG ◽  
H.-Y. LEE ◽  
M. ESASHI
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Mems Switch
Sign in / Sign up

Export Citation Format

Share Document