Recent developments in long wavelength VCSELs based on localized wafer fusion

Author(s):  
E. Kapon ◽  
A. Sirbu ◽  
V. Iakovlev ◽  
A. Mereuta ◽  
A. Caliman ◽  
...  
2020 ◽  
Vol 46 (12) ◽  
pp. 1257-1262
Author(s):  
S. A. Blokhin ◽  
M. A. Bobrov ◽  
A. A. Blokhin ◽  
A. P. Vasil’ev ◽  
A. G. Kuz’menkov ◽  
...  

2014 ◽  
Vol 70 (a1) ◽  
pp. C604-C604
Author(s):  
Dorothee Liebschner ◽  
Naohiro Matsugaki ◽  
Miki Senda ◽  
Yusuke Yamada ◽  
Toshiya Senda

Single wavelength anomalous diffraction (SAD) is a powerful experimental phasing technique used in macromolecular crystallography (MX). SAD is based on the absorption of X-rays by heavy atoms, which can be either incorporated into the protein (crystal) or naturally present in the structure, such as sulfur or metal ions. In particular, sulfur seems to be an attractive candidate for phasing, because most proteins contain a considerable number of S atoms. However, the K-absorption edge of sulfur is around 5.1 Å wavelength (2.4 keV), which is far from the optimal wavelength of most MX-beamlines at synchrotrons. Therefore, phasing experiments have to be performed further away from the absorption edge, which results in weaker anomalous signal. This explains why S-SAD was not commonly used for a long time, although its feasibility was illustrated by the ground-breaking study by Hendrickson and Teeter [1]. Recent developments in instrumentation, software and methodology made it possible to measure intensities more accurately, and, as a consequence, S-SAD has lately obtained more and more attention [2]. The beamline BL-1A at Photon factory (KEK, Japan) is designed to take full advantage of a long wavelength X-ray beam at around 3 Å to further enhance anomalous signals. We performed S-SAD experiments at BL-1A using two different wavelengths (1.9 Å and 2.7 Å) and compared their phasing capabilities. This methodological study was performed with ferredoxin reductase crystals of various sizes. In order to guarantee statistical validity and to exclude the influence of a particular sample, we repeated the comparison with several crystals. The novelty in the approach consists in using very long wavelengths (2.7 Å), not fully exploited in the literature so far. According to our study, the 2.7 Å wavelength shows - despite strong absorption effects of the diffracted X-rays - more successful phasing results than at 1.9 Å.


1998 ◽  
Vol 34 (10) ◽  
pp. 1904-1913 ◽  
Author(s):  
Y. Ohiso ◽  
C. Amano ◽  
Y. Itoh ◽  
H. Takenouchi ◽  
T. Kurokawa

1997 ◽  
Vol 08 (02) ◽  
pp. 357-376 ◽  
Author(s):  
Dubravko I. Babić ◽  
John. E. Bowers ◽  
Evelyn L. Hu ◽  
Long Yang ◽  
Kent Carey

This paper discusses the issues connected with the application of fusion bonding technology for surface-normal optoelectronic devices (III-V semiconductors). The InP/GaAs fusion bonding technology employed in the development of long-wavelength vertical-cavity lasers is described.


Author(s):  
Ian Kearney ◽  
Mark Dipsey

Abstract Photoluminescence, defect-band emission, and Lock-in Infrared Thermography (LIT) generally enable the correlation of multi-crystalline silicon defect types. Long Wavelength Infrared (LWIR) thermal imaging has traditionally seen limited application in failure analysis. LWIR cameras are typically uncooled systems using a microbolometer Focal Plane Arrays (FPA) commonly used in industrial IR applications, although cooled LWIR cameras using Mercury Cadmium Tellurium (MCT) detectors exists as well. On the contrary, the majority of the MWIR cameras require cooling, using either liquid nitrogen or a Stirling cycle cooler. Cooling to approximately −196 °C (77 K), offers excellent thermal resolution, but it may restrict the span of applications to controlled environments. Recent developments in LWIR uncooled and unstabilized micro-bolometer technology combined with microscopic IR lens design advancements are presented as an alternative solution for viable low-level leakage (LLL) defect localization and circuit characterization. The 30 micron pitch amorphous silicon type detector used in these analyses, rather than vanadium oxide (VOx), has sensitivity less than 50mK at 25C. Case studies reported demonstrate LWIR enhanced package-level and die-level defect localization contrasted with other quantum and thermal detectors in localization systems.


Author(s):  
A. Mereuta ◽  
A. Caliman ◽  
P. Wolf ◽  
A. Sirbu ◽  
V. Iakovlev ◽  
...  
Keyword(s):  

Author(s):  
S. Nakagawa ◽  
E. Hall ◽  
L. A. Coldren

Sign in / Sign up

Export Citation Format

Share Document