Trends in Discrete Power MOSFET and Power System In-Package Fault Isolation

Author(s):  
Ian Kearney ◽  
Mark Dipsey

Abstract Photoluminescence, defect-band emission, and Lock-in Infrared Thermography (LIT) generally enable the correlation of multi-crystalline silicon defect types. Long Wavelength Infrared (LWIR) thermal imaging has traditionally seen limited application in failure analysis. LWIR cameras are typically uncooled systems using a microbolometer Focal Plane Arrays (FPA) commonly used in industrial IR applications, although cooled LWIR cameras using Mercury Cadmium Tellurium (MCT) detectors exists as well. On the contrary, the majority of the MWIR cameras require cooling, using either liquid nitrogen or a Stirling cycle cooler. Cooling to approximately −196 °C (77 K), offers excellent thermal resolution, but it may restrict the span of applications to controlled environments. Recent developments in LWIR uncooled and unstabilized micro-bolometer technology combined with microscopic IR lens design advancements are presented as an alternative solution for viable low-level leakage (LLL) defect localization and circuit characterization. The 30 micron pitch amorphous silicon type detector used in these analyses, rather than vanadium oxide (VOx), has sensitivity less than 50mK at 25C. Case studies reported demonstrate LWIR enhanced package-level and die-level defect localization contrasted with other quantum and thermal detectors in localization systems.

Author(s):  
Ke-Ying Lin ◽  
Pei-Fen Lue ◽  
Jayce Liu ◽  
Paul Kenneth Ang

Abstract The paper demonstrates accurate fault isolation information of metal-insulator-metal (MiM) capacitor failures by lock-in thermograph (LIT). In this study, a phase image spot location at a lock-in frequency larger than 5 Hz gives more accurate defect localization than an LIT amplitude image or OBIRCH to determine the next FA steps.


Author(s):  
Christian Schmidt ◽  
Frank Altmann ◽  
David P. Vallett

Abstract Lock-in thermography and magnetic current imaging are emerging as the two image-based fault isolation methods most capable of meeting the challenges of short and open defect localization in thick, opaque assemblies. Such devices are rapidly becoming prevalent as 3D integration begins to ramp up production. This paper expands on previously published work with a qualitative comparison of the techniques on single chip and stacked die packages with known designed-in or FIB created defects.


2018 ◽  
Author(s):  
Ke-Ying Lin ◽  
Chih-Yi Tang ◽  
Yu Chi Wang

Abstract The paper demonstrates the moving of lock-in thermography (LIT) spot location by adjusting the lock-in frequency from low to high. Accurate defect localization in stacked-die devices was decided by the fixed LIT spot location after the lock-in frequency was higher than a specific value depending on the depth of the defect in the IC. Physical failure analysis was performed based on LIT results, which provided clear physical defect modes of the stacked-die devices.


Author(s):  
Kristopher D. Staller

Abstract Cold temperature failures are often difficult to resolve, especially those at extreme low levels (< -40°C). Momentary application of chill spray can confirm the failure mode, but is impractical during photoemission microscopy (PEM), laser scanning microscopy (LSM), and multiple point microprobing. This paper will examine relatively low-cost cold temperature systems that can hold samples at steady state extreme low temperatures and describe a case study where a cold temperature stage was combined with LSM soft defect localization (SDL) to rapidly identify the cause of a complex cold temperature failure mechanism.


Author(s):  
Mayue Xie ◽  
Zhiguo Qian ◽  
Mario Pacheco ◽  
Zhiyong Wang ◽  
Rajen Dias ◽  
...  

Abstract Recently, a new approach for isolation of open faults in integrated circuits (ICs) was developed. It is based on mapping the radio-frequency (RF) magnetic field produced by the defective part fed with RF probing current, giving the name to Space Domain Reflectometry (SDR). SDR is a non-contact and nondestructive technique to localize open defects in package substrates, interconnections and semiconductor devices. It provides 2D failure isolation capability with defect localization resolution down to 50 microns. It is also capable of scanning long traces in Si. This paper describes the principles of the SDR and its application for the localization of open and high resistance defects. It then discusses some analysis methods for application optimization, and gives examples of test samples as well as case studies from actual failures.


2014 ◽  
Vol 4 (1) ◽  
pp. 348-354 ◽  
Author(s):  
Steve Johnston ◽  
Harvey Guthrey ◽  
Fei Yan ◽  
Katherine Zaunbrecher ◽  
Mowafak Al-Jassim ◽  
...  

2019 ◽  
Vol 96 ◽  
pp. 251-261 ◽  
Author(s):  
Sir (Don) B. Rafol ◽  
Sarath D. Gunapala ◽  
Sam A. Keo ◽  
David Z. Ting ◽  
Alex Soibel ◽  
...  

2014 ◽  
Vol 70 (a1) ◽  
pp. C604-C604
Author(s):  
Dorothee Liebschner ◽  
Naohiro Matsugaki ◽  
Miki Senda ◽  
Yusuke Yamada ◽  
Toshiya Senda

Single wavelength anomalous diffraction (SAD) is a powerful experimental phasing technique used in macromolecular crystallography (MX). SAD is based on the absorption of X-rays by heavy atoms, which can be either incorporated into the protein (crystal) or naturally present in the structure, such as sulfur or metal ions. In particular, sulfur seems to be an attractive candidate for phasing, because most proteins contain a considerable number of S atoms. However, the K-absorption edge of sulfur is around 5.1 Å wavelength (2.4 keV), which is far from the optimal wavelength of most MX-beamlines at synchrotrons. Therefore, phasing experiments have to be performed further away from the absorption edge, which results in weaker anomalous signal. This explains why S-SAD was not commonly used for a long time, although its feasibility was illustrated by the ground-breaking study by Hendrickson and Teeter [1]. Recent developments in instrumentation, software and methodology made it possible to measure intensities more accurately, and, as a consequence, S-SAD has lately obtained more and more attention [2]. The beamline BL-1A at Photon factory (KEK, Japan) is designed to take full advantage of a long wavelength X-ray beam at around 3 Å to further enhance anomalous signals. We performed S-SAD experiments at BL-1A using two different wavelengths (1.9 Å and 2.7 Å) and compared their phasing capabilities. This methodological study was performed with ferredoxin reductase crystals of various sizes. In order to guarantee statistical validity and to exclude the influence of a particular sample, we repeated the comparison with several crystals. The novelty in the approach consists in using very long wavelengths (2.7 Å), not fully exploited in the literature so far. According to our study, the 2.7 Å wavelength shows - despite strong absorption effects of the diffracted X-rays - more successful phasing results than at 1.9 Å.


Sensors ◽  
2020 ◽  
Vol 20 (5) ◽  
pp. 1321 ◽  
Author(s):  
Enrique Villa ◽  
Natalia Arteaga-Marrero ◽  
Juan Ruiz-Alzola

Thermal imaging is a promising technology in the medical field. Recent developments in low-cost infrared (IR) sensors, compatible with smartphones, provide competitive advantages for home-monitoring applications. However, these sensors present reduced capabilities compared to more expensive high-end devices. In this work, the characterization of thermal cameras is described and carried out. This characterization includes non-uniformity (NU) effects and correction as well as the thermal cameras’ dependence on room temperature, noise-equivalent temperature difference (NETD), and response curve stability with temperature. Results show that low-cost thermal cameras offer good performance, especially when used in temperature-controlled environments, providing evidence of the suitability of such sensors for medical applications, particularly in the assessment of diabetic foot ulcers on which we focused this study.


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