Recent developments in long-wavelength laser devices

1981 ◽  
Author(s):  
R. J. Nelson
2014 ◽  
Vol 70 (a1) ◽  
pp. C604-C604
Author(s):  
Dorothee Liebschner ◽  
Naohiro Matsugaki ◽  
Miki Senda ◽  
Yusuke Yamada ◽  
Toshiya Senda

Single wavelength anomalous diffraction (SAD) is a powerful experimental phasing technique used in macromolecular crystallography (MX). SAD is based on the absorption of X-rays by heavy atoms, which can be either incorporated into the protein (crystal) or naturally present in the structure, such as sulfur or metal ions. In particular, sulfur seems to be an attractive candidate for phasing, because most proteins contain a considerable number of S atoms. However, the K-absorption edge of sulfur is around 5.1 Å wavelength (2.4 keV), which is far from the optimal wavelength of most MX-beamlines at synchrotrons. Therefore, phasing experiments have to be performed further away from the absorption edge, which results in weaker anomalous signal. This explains why S-SAD was not commonly used for a long time, although its feasibility was illustrated by the ground-breaking study by Hendrickson and Teeter [1]. Recent developments in instrumentation, software and methodology made it possible to measure intensities more accurately, and, as a consequence, S-SAD has lately obtained more and more attention [2]. The beamline BL-1A at Photon factory (KEK, Japan) is designed to take full advantage of a long wavelength X-ray beam at around 3 Å to further enhance anomalous signals. We performed S-SAD experiments at BL-1A using two different wavelengths (1.9 Å and 2.7 Å) and compared their phasing capabilities. This methodological study was performed with ferredoxin reductase crystals of various sizes. In order to guarantee statistical validity and to exclude the influence of a particular sample, we repeated the comparison with several crystals. The novelty in the approach consists in using very long wavelengths (2.7 Å), not fully exploited in the literature so far. According to our study, the 2.7 Å wavelength shows - despite strong absorption effects of the diffracted X-rays - more successful phasing results than at 1.9 Å.


Author(s):  
Ian Kearney ◽  
Mark Dipsey

Abstract Photoluminescence, defect-band emission, and Lock-in Infrared Thermography (LIT) generally enable the correlation of multi-crystalline silicon defect types. Long Wavelength Infrared (LWIR) thermal imaging has traditionally seen limited application in failure analysis. LWIR cameras are typically uncooled systems using a microbolometer Focal Plane Arrays (FPA) commonly used in industrial IR applications, although cooled LWIR cameras using Mercury Cadmium Tellurium (MCT) detectors exists as well. On the contrary, the majority of the MWIR cameras require cooling, using either liquid nitrogen or a Stirling cycle cooler. Cooling to approximately −196 °C (77 K), offers excellent thermal resolution, but it may restrict the span of applications to controlled environments. Recent developments in LWIR uncooled and unstabilized micro-bolometer technology combined with microscopic IR lens design advancements are presented as an alternative solution for viable low-level leakage (LLL) defect localization and circuit characterization. The 30 micron pitch amorphous silicon type detector used in these analyses, rather than vanadium oxide (VOx), has sensitivity less than 50mK at 25C. Case studies reported demonstrate LWIR enhanced package-level and die-level defect localization contrasted with other quantum and thermal detectors in localization systems.


2019 ◽  
Vol 9 (3) ◽  
pp. 385 ◽  
Author(s):  
Qi Feng ◽  
Wenqi Wei ◽  
Bin Zhang ◽  
Hailing Wang ◽  
Jianhuan Wang ◽  
...  

Direct epitaxial growth of III-V heterostructure on CMOS-compatible silicon wafer offers substantial manufacturing cost and scalability advantages. Quantum dot (QD) devices are less sensitive to defect and temperature, which makes epitaxially grown III-V QD lasers on Si one of the most promising technologies for achieving low-cost, scalable integration with silicon photonics. The major challenges are that heteroepitaxial growth of III-V materials on Si normally encounters high densities of mismatch dislocations, antiphase boundaries and thermal cracks, which limit the device performance and lifetime. This paper reviews some of the recent developments on hybrid InAs/GaAs QD growth on Ge substrates and highly uniform (111)-faceted hollow Si (001) substrates by molecular beam epitaxy (MBE). By implementing step-graded epitaxial growth techniques, the emission wavelength can be tuned into either an O band or C/L band. Furthermore, microcavity QD laser devices are fabricated and characterized. The epitaxially grown III-V/IV hybrid platform paves the way to provide a promising approach for future on-chip silicon photonic integration.


Author(s):  
S. Nakagawa ◽  
E. Hall ◽  
L. A. Coldren

1990 ◽  
Author(s):  
Patrick L. Mottier ◽  
Christian Lucas ◽  
Michel Ravetto ◽  
Patrick Agnese

1979 ◽  
Vol 44 ◽  
pp. 307-313
Author(s):  
D.S. Spicer

A possible relationship between the hot prominence transition sheath, increased internal turbulent and/or helical motion prior to prominence eruption and the prominence eruption (“disparition brusque”) is discussed. The associated darkening of the filament or brightening of the prominence is interpreted as a change in the prominence’s internal pressure gradient which, if of the correct sign, can lead to short wavelength turbulent convection within the prominence. Associated with such a pressure gradient change may be the alteration of the current density gradient within the prominence. Such a change in the current density gradient may also be due to the relative motion of the neighbouring plages thereby increasing the magnetic shear within the prominence, i.e., steepening the current density gradient. Depending on the magnitude of the current density gradient, i.e., magnetic shear, disruption of the prominence can occur by either a long wavelength ideal MHD helical (“kink”) convective instability and/or a long wavelength resistive helical (“kink”) convective instability (tearing mode). The long wavelength ideal MHD helical instability will lead to helical rotation and thus unwinding due to diamagnetic effects and plasma ejections due to convection. The long wavelength resistive helical instability will lead to both unwinding and plasma ejections, but also to accelerated plasma flow, long wavelength magnetic field filamentation, accelerated particles and long wavelength heating internal to the prominence.


Author(s):  
C. Colliex ◽  
P. Trebbia

The physical foundations for the use of electron energy loss spectroscopy towards analytical purposes, seem now rather well established and have been extensively discussed through recent publications. In this brief review we intend only to mention most recent developments in this field, which became available to our knowledge. We derive also some lines of discussion to define more clearly the limits of this analytical technique in materials science problems.The spectral information carried in both low ( 0<ΔE<100eV ) and high ( >100eV ) energy regions of the loss spectrum, is capable to provide quantitative results. Spectrometers have therefore been designed to work with all kinds of electron microscopes and to cover large energy ranges for the detection of inelastically scattered electrons (for instance the L-edge of molybdenum at 2500eV has been measured by van Zuylen with primary electrons of 80 kV). It is rather easy to fix a post-specimen magnetic optics on a STEM, but Crewe has recently underlined that great care should be devoted to optimize the collecting power and the energy resolution of the whole system.


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