TVS Diode Coupled Gate Driver Circuit for Series Connected Power Devices used in Circuit Breaker Applications

Author(s):  
Lakshmi Ravi ◽  
Jian Liu ◽  
Dong Dong ◽  
Rolando Burgos ◽  
Xiaoqing Song ◽  
...  
Author(s):  
Yan Xue ◽  
Kai Liu ◽  
Longjie Wang ◽  
Yu Zhang ◽  
Yuzhi Zheng ◽  
...  
Keyword(s):  

2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.


2019 ◽  
Vol 7 ◽  
pp. 309-314 ◽  
Author(s):  
Jin-Ho Kim ◽  
Jongsu Oh ◽  
Keechan Park ◽  
Jae-Hong Jeon ◽  
Yong-Sang Kim

2004 ◽  
Vol 5 (2) ◽  
pp. 1-5 ◽  
Author(s):  
Jin Jeon ◽  
Won‐Kyu Lee ◽  
Jun‐ho Song ◽  
Hyung‐guel Kim

2012 ◽  
Vol 51 ◽  
pp. 04DE09
Author(s):  
Sang-Kug Han ◽  
Hoon Choi ◽  
Kyo-Ho Moon ◽  
Young-Seok Choi ◽  
Kyung-Deuk Jeong ◽  
...  

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