First Demonstration of High Temperature SiC CMOS Gate Driver in Bridge Leg for Hybrid Power Module Application

2018 ◽  
Vol 924 ◽  
pp. 854-857
Author(s):  
Ming Hung Weng ◽  
Muhammad I. Idris ◽  
S. Wright ◽  
David T. Clark ◽  
R.A.R. Young ◽  
...  
Keyword(s):  
High Temperature ◽  
Integrated Circuits ◽  
Initial Increase ◽  
Reliability Test ◽  
Power Devices ◽  
Power Module ◽  
Hybrid Power ◽  
Gate Driver ◽  
Passive Circuit

A high-temperature silicon carbide power module using CMOS gate drive technology and discrete power devices is presented. The power module was aged at 200V and 300 °C for 3,000 hours in a long-term reliability test. After the initial increase, the variation in the rise time of the module is 27% (49.63ns@1,000h compared to 63.1ns@3,000h), whilst the fall time increases by 54.3% (62.92ns@1,000h compared to 97.1ns@3,000h). The unique assembly enables the integrated circuits of CMOS logic with passive circuit elements capable of operation at temperatures of 300°C and beyond.

Precise Chip Joint Method with Sub-micron Au Particle for High-density SiC Power Module Operating at High Temperature

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000254-000259 ◽  
Author(s):  
Fumiki Kato ◽  
Fengqun Lang ◽  
Simanjorang Rejeki ◽  
Hiroshi Nakagawa ◽  
Hiroshi Yamaguchi ◽  
...  
Keyword(s):  
Shear Strength ◽  
High Temperature ◽  
Flip Chip ◽  
Stress Test ◽  
High Density ◽  
Cathode Side ◽  
Module Structure ◽  
Power Devices ◽  
Power Module ◽  
Joint Method

In this work, a novel precise chip joint method using sub-micron Au particle for high-density silicon carbide (SiC) power module operating at high temperature is proposed. A module structure of SiC power devices are sandwiched between two silicon nitride-active metal brazed copper (SiN-AMC) circuit boards. To make a precise position and height control of the chip bonding, the top side (gate/source or anode pad side) of SiC power devices are flip-chip bonded to circuit electrodes using sub-micron Au particle with low temperature (250°C) and pressure-less sintering. The accuracy of the bonding position of chips was less than 10 μm and the accuracy of the height after bonding chips was less than 15 μm. Mechanical shear fatigue tests for flip-chip bonded SiC Schottky barrier diode (SBD) were carried out. As a result, initial shear strength of the joint was 36 MPa. The shear strength of 43 MPa is obtained after storage life test (500 hours at 250°C), and also 35 MPa is obtained even after thermal cycle stress test (1000 cycles between −40°C and 250°C). The flip-chip bonding of SiC-JFET is successfully realizedon the substrate without short or open failure electrically. Finally we joint the backside of the SiC-JFET (drain side) and the SiC-SBD (cathode side) to each circuit electrodes at once by means of reflow process with Au-12%Ge solder. The structured sandwich SiC power module was also successfully formed.

scholarly journals High temperature, Smart Power Module for aircraft actuators

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000069-000074
Author(s):  
Khalil El Falahi ◽  
Stanislas Hascoët ◽  
Cyril Buttay ◽  
Pascal Bevilacqua ◽  
Luong-Viet Phung ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Wide Temperature Range ◽  
Power Module ◽  
Smart Power ◽  
Temperature Range ◽  
Electric Aircraft ◽  
Gate Driver ◽  
Proper Operation ◽  
More Electric Aircraft

More electric aircraft require converters that can operate over a wide temperature range (−55 to more than 200°C). Silicon carbide JFETs can satisfy these requirements, but there is a need for suitable peripheral components (gate drivers, passives. . . ). In this paper, we present a “smart power module” based on SiC JFETs and dedicated integrated gate driver circuits. The design is detailed, and some electrical results are given, showing proper operation of the module up to 200°C.

Study of the electrical and thermal properties of a silicone elastomer filled with silica for high temperature power device encapsulation

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 1-9 ◽  
Author(s):  
E. Sili ◽  
M.L. Locatelli ◽  
M. Bechara ◽  
S. Diaham ◽  
S. Dinculescu
Keyword(s):  
High Temperature ◽  
Temperature Limit ◽  
Silicone Elastomer ◽  
Power Device ◽  
Maximum Temperature ◽  
Power Devices ◽  
Power Module ◽  
Temperature Range ◽  
Dimethyl Siloxane ◽  
Silicone Gels

In order to take the full advantage of the high-temperature SiC and GaN operating power devices, package materials able to withstand high-temperature storage and large thermal cycles are required. However, a survey of the commercially available silicone gels mostly used for power module encapsulation, highlights that this type of materials exhibits a maximum temperature limit for continuous operation of about 260 °C. A slight extension of this temperature range might be obtained by using silicone elastomers with hardness still remaining measurable on the Shore A scale. The aim of this paper is to study a silicone elastomer poly(dimethyl)siloxane (PDMS) with silica fillers, with a specified maximum operating temperature of 275 °C, in order to evaluate its ability for high temperature power device encapsulation. First, the nature and size of the filler microparticles were determined using scanning electron microscopy (SEM) observations coupled with energy dispersive X-ray spectroscopy (EDX) analysis. Second, the results of the thermal and electrical properties of this elastomer over a wide temperature range show that this type of insulating materials presents promising initial properties for the encapsulation of high temperature power devices.

scholarly journals Design and Manufacturing of a Double-Side Cooled, SiC based, High Temperature Inverter Leg

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000372-000377 ◽  
Author(s):  
Raphaël RIVA ◽  
Cyril BUTTAY ◽  
Marie-Laure LOCATELLI ◽  
Vincent BLEY ◽  
Bruno ALLARD
Keyword(s):  
High Temperature ◽  
Dielectric Material ◽  
Heat Extraction ◽  
Power Devices ◽  
Power Module ◽  
Ceramic Substrates ◽  
Design And Manufacturing ◽  
Temperature Capability ◽  
Silver Sintering ◽  
Very High

In this paper, we present a small (25×25×3 mm3) power module that integrates two silicon-carbide (SiC) JFETs to form an inverter leg. This module has a “sandwich” structure, i.e. the power devices are placed between two ceramic substrates, allowing for heat extraction from both sides of the dies. All interconnects are made by silver sintering, which offers a very high temperature capability (the melting point of pure silver being 961 °C). The risk of silver migration is assessed, and we show that Parylene-HT, a dielectric material that can sustain more than 300 °C, can completely coat the module, providing adequate protection.

scholarly journals Material Shear Strength Assessment of AU/20SN Interconnection for High Temperature Applications

2018 ◽  
Vol 35 (1) ◽  
pp. 81-91 ◽  
Author(s):  
L. L. Liao ◽  
K. N. Chiang
Keyword(s):  
Shear Strength ◽  
High Temperature ◽  
Fracture Morphology ◽  
Power Module ◽  
Strength Assessment ◽  
Shear Strength Test ◽  
Treatment Conditions ◽  
Temperature Load ◽  
Different Temperatures

AbstractWhen a power module is under a continuous electrical load, a temperature effect is induced by the current load in the module configuration. The joint material therefore has long-term temperature and mechanical loadings under supplied power. A long-term temperature load can change the material and mechanical properties, including voiding, cracking, creeping and fracturing. Au/20Sn eutectic alloy, a highly temperature resistant material, is typically used for electric interconnections in high-power modules. The Au/20Sn is converted into AuSn and an Au5Sn intermetallic compound (IMC) by solid liquid inter-diffusion (SLID) bonding to form joints with high melting points. In this study, a test vehicle based on an actual power module was designed and fabricated to investigate and understand the material properties and mechanical behavior of Au/20Sn solder under a temperature load. The joint microstructure exhibited variation under different thermal treatment conditions such as temperature and load durations. The shear strength test was conducted to examine the mechanical strength of the joints under different thermal load conditions. The failure mode of the joint was further determined using fracture morphology after the shear test. Finally, the shear strength of Au/20Sn was identified to investigate the high temperature resistance of joints under different temperatures. The mechanical strengths of joints under different temperature loads are expressions of different mechanical characteristics and can be used to determine reliability at an intended high application temperature.

High Temperature (250 °C) Silicon Carbide Power Modules With Integrated Gate Drive Boards

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000297-000304 ◽  
Author(s):  
B. Reese ◽  
B. McPherson ◽  
R. Shaw ◽  
J. Hornberger ◽  
R. Schupbach ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Performance ◽  
Single Phase ◽  
University Of Arkansas ◽  
Power Module ◽  
Power Modules ◽  
Gate Driver ◽  
Switch Position ◽  
The University

Arkansas Power Electronics International, Inc., in collaboration with the University of Arkansas and Rohm, Ltd., have developed a high-temperature, high-performance Silicon-Carbide (SiC) based power module with integrated gate driver. This paper presents a description of the single phase half-bridge module containing eight Rohm 30 A SiC DMOSFETs in parallel per switch position. The electrical and thermal performance of the system under power is also presented.

scholarly journals GaN Power Module with High Temperature Gate Driver and Insulated Power Supply

2014 ◽  
Vol 2014 (HITEC) ◽  
pp. 000198-000205 ◽  
Author(s):  
Rémi Perrin ◽  
Dominique Bergogne ◽  
Christian Martin ◽  
Bruno Allard
Keyword(s):  
High Temperature ◽  
Internal Combustion Engines ◽  
High Efficiency ◽  
Input Voltage ◽  
Power Module ◽  
Switching Speed ◽  
Switching Losses ◽  
Power Switches ◽  
Gate Driver ◽  
Embedded Power

Emerging GaN power switches show advantages for integration in power modules at high temperature and/or high efficiency. These modules are good candidates for embedded power converters in harsh environment such as three phase inverters for Electro-Mechanical Actuators (EMA) in the vicinity of internal combustion engines. The power range is usually within 1 to 5 kW, extending sometimes up to 50 kW, using a high voltage DC bus (HVDC) that is usually comprised between 200 V and 600 V. For aeronautical applications, GaN power switches could challenge SiC transistors for their high switching speed, hence reduced switching losses, therefore lower embarked mass. For automotive applications, it is the relative promise for lower cost per Amp that is pushing this technology up. This is why a project joining GaN device conception, power module development and gate driver optimization using high temperature technologies was set-up. This paper presents the first practical results: a functional GaN power inverter-leg driven by a specific high temperature gate driver with signal and power insulation. This building block requires an auxiliary DC supply with a input voltage of 14 V or 28 V and an external PWM control signal. Current rating is 20 A and breakdown voltage is 200 V.

Microstructural characterization of a rapidly solidified Al-Fe-V-Si alloy for elevated temperature applications

1988 ◽  
Vol 46 ◽  
pp. 550-551
Author(s):  
R. E. Franck ◽  
J. A. Hawk ◽  
G. J. Shiflet
Keyword(s):  
High Temperature ◽  
Elevated Temperature ◽  
Grain Growth ◽  
Volume Fraction ◽  
Microstructural Characterization ◽  
Second Phase ◽  
Microstructural Stability ◽  
Elevated Temperature Strength ◽  
Temperature Applications

Rapid solidification processing (RSP) is one method of producing high strength aluminum alloys for elevated temperature applications. Allied-Signal, Inc. has produced an Al-12.4 Fe-1.2 V-2.3 Si (composition in wt pct) alloy which possesses good microstructural stability up to 425°C. This alloy contains a high volume fraction (37 v/o) of fine nearly spherical, α-Al12(Fe, V)3Si dispersoids. The improved elevated temperature strength and stability of this alloy is due to the slower dispersoid coarsening rate of the silicide particles. Additionally, the high v/o of second phase particles should inhibit recrystallization and grain growth, and thus reduce any loss in strength due to long term, high temperature annealing.The focus of this research is to investigate microstructural changes induced by long term, high temperature static annealing heat-treatments. Annealing treatments for up to 1000 hours were carried out on this alloy at 500°C, 550°C and 600°C. Particle coarsening and/or recrystallization and grain growth would be accelerated in these temperature regimes.

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